SI1077X MOSFET Datasheet: P-Ch, 20V, 1.75A. Full specification with pinout and replacement list

SI1077X Specs and Replacement

Type Designator: SI1077X

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm

Package: SC-89

SI1077X substitution

- MOSFET ⓘ Cross-Reference Search

SI1077X datasheet

..1. Size:163K vishay
si1077x.pdf pdf_icon

Si1077X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Typical ESD Performance 2500 V 0.078 at VGS = - 4.5 V - 1.4 100 % Rg Tested Material categorization 0.098 at VGS = - 2.5 V - 1 - 20 12.1 nC For definitions of compliance please see 0.130 at VGS = - 1.8 V - 1 www.vi... See More ⇒

9.1. Size:120K vishay
si1070x.pdf pdf_icon

Si1070X Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.099 at VGS = 4.5 V 1.2a TrenchFET Power MOSFET 30 3.5 0.140 at VGS = 2.5 V 1.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable De... See More ⇒

9.2. Size:122K vishay
si1072x.pdf pdf_icon

Si1072X Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.093 at VGS = 10 V 1.3a TrenchFET Power MOSFET 30 5.41 0.129 at VGS = 4.5 V 1.2 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable De... See More ⇒

9.3. Size:203K vishay
si1079x.pdf pdf_icon

Si1079X www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Typical ESD performance 2500 V 0.100 at VGS = -4.5 V -1.44 100 % Rg tested -30 0.112 at VGS = -3.7 V -1.36 8.1 nC Material categorization 0.140 at VGS = -2.5 V -1.22 For definitions of compliance please s... See More ⇒