SI1403CDL MOSFET Datasheet: P-Ch, 20V, 1.6A. Full specification with pinout and replacement list

SI1403CDL Specs and Replacement

Type Designator: SI1403CDL

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 73 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: SOT-363

SI1403CDL substitution

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SI1403CDL datasheet

..1. Size:235K vishay
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Si1403CDL Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)c Qg (Typ.) Definition 0.140 at VGS = - 4.5 V - 2.1 TrenchFET Power MOSFET - 20 0.160 at VGS = - 3.6 V - 1.9 4 nC 100 % Rg Tested 0.222 at VGS = - 2.5 V - 1.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS... See More ⇒

8.1. Size:409K vishay
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Si1403DL New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A) Pb-free Available 0.180 at VGS = - 4.5 V 1.5 RoHS* - 25 0.200 at VGS = - 3.6 V 1.4 COMPLIANT 0.265 at VGS = - 2.5 V 1.2 SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code OA XX 5 D 2 D Lot Traceability and Date Code G ... See More ⇒

8.2. Size:249K vishay
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Si1403BDL Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.150 at VGS = - 4.5 V - 1.5 TrenchFET Power MOSFET 0.175 at VGS = - 3.6 V - 1.4 2.9 - 20 Compliant to RoHS Directive 2002/95/EC 0.265 at VGS = - 2.5 V - 1.2 SOT-363 SC-70 (6-LEADS) D 1 6 D ... See More ⇒

9.1. Size:259K vishay
si1401edh.pdf pdf_icon

New Product Si1401EDH Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.034 at VGS = - 4.5 V - 4 TrenchFET Power MOSFET 0.046 at VGS = - 2.5 V - 4 Typical ESD Performance 1500 V - 12 14.1 nC 100 % Rg Tested 0.070 at VGS = - 1.8 V - 4 Compl... See More ⇒