SI1419DH PDF and Equivalents Search

 

SI1419DH Specs and Replacement

Type Designator: SI1419DH

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: SOT-363

SI1419DH substitution

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SI1419DH datasheet

 ..1. Size:100K  vishay
si1419dh.pdf pdf_icon

SI1419DH

Si1419DH Vishay Siliconix P-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 5.0 at VGS = - 10 V - 0.38 TrenchFET Power MOSFETS - 200 4.1 5.1 at VGS = - 6 V - 0.37 Small, Thermally Enhanced SC-70 Package Ultra Low On-Resistance Compliant to RoHS Directive 2002/9... See More ⇒

 9.1. Size:225K  vishay
si1414dh.pdf pdf_icon

SI1419DH

New Product Si1414DH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.046 at VGS = 4.5 V TrenchFET Power MOSFET 4 100 % Rg Tested 0.050 at VGS = 2.5 V 30 4 5.7 nC Compliant to RoHS Directive 2002/95/EC 0.057 at VGS = 1.8 V 4 APPLICATIONS ... See More ⇒

 9.2. Size:236K  vishay
si1410edh.pdf pdf_icon

SI1419DH

Si1410EDH Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.070 at VGS = 4.5 V 3.7 TrenchFET Power MOSFETs 1.8 V Rated 20 0.080 at VGS = 2.5 V 3.4 ESD Protected 2000 V Thermally Enhanced SC-70 Package 0.100 at VGS = 1.8 V 3.0 Compliant to RoHS Direc... See More ⇒

 9.3. Size:236K  vishay
si1413dh.pdf pdf_icon

SI1419DH

Si1413DH Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.115 at VGS = - 4.5 V - 2.9 TrenchFET Power MOSFETs 1.8 V Rated 0.155 at VGS = - 2.5 V - 20 - 2.4 Thermally Enhanced SC-70 Package 0.220 at VGS = - 1.8 V - 2.0 Compliant to RoHS Directive 2002/9... See More ⇒

Detailed specifications: SI1406DH, SI1410EDH, SI1411DH, SI1413DH, SI1413EDH, SI1414DH, SI1416EDH, SI1417EDH, IRF640N, SI1422DH, SI1424EDH, SI1426DH, SI1427EDH, SI1428EDH, SI1431DH, SI1433DH, SI1441EDH

Keywords - SI1419DH MOSFET specs

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