SI1424EDH MOSFET Datasheet: N-Ch, 20V, 4A. Full specification with pinout and replacement list

SI1424EDH Specs and Replacement

Type Designator: SI1424EDH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 600 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: SOT-363

SI1424EDH substitution

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SI1424EDH datasheet

..1. Size:261K vishay
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New Product Si1424EDH Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.033 at VGS = 4.5 V 4 TrenchFET Power MOSFET 0.038 at VGS = 2.5 V 4 Typical ESD Protection 4000 V 20 6 nC 0.045 at VGS = 1.8 V 4 100 % Rg Tested Compliant to RoHS Direct... See More ⇒

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New Product Si1422DH Vishay Siliconix N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.026 at VGS = 4.5 V 4 TrenchFET Power MOSFET 100 % Rg Tested 12 0.030 at VGS = 2.5 V 4 7.5 nC Compliant to RoHS Directive 2002/95/EC 0.036 at VGS = 1.8 V 4 APPLICATIONS Loa... See More ⇒

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New Product Si1428EDH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.045 at VGS = 10 V 4 TrenchFET Power MOSFET 30 0.049 at VGS = 4.5 V 4 4 nC Typical ESD Protection 2000 V HBM 0.060 at VGS = 2.5 V 4 100 % Rg Tested Compliant to RoHS Dire... See More ⇒

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