SI1441EDH Datasheet and Replacement
Type Designator: SI1441EDH
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 90 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: SOT-363
SI1441EDH substitution
SI1441EDH Datasheet (PDF)
si1441edh.pdf

New ProductSi1441EDHVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.041 at VGS = - 4.5 V - 4 TrenchFET Power MOSFET- 20 0.054 at VGS = - 2.5 V - 4 12.5 nC Typical ESD Performance 1500 V 100 % Rg Tested0.100 at VGS = - 1.8 V - 4 Compli
si1443edh.pdf

New Product Si1443EDHVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) Typical ESD Performance 1500 V HBM 100 % Rg Tested0.054 at VGS = - 10 V - 4a Material categorization:- 30 0.062 at VGS = - 4.5 V - 4a 8.6 nCFor definitions of compliance please see0.085 at VGS = - 2.5 V -
si1442dh.pdf

New ProductSi1442DHVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)a Qg (Typ.) 100 % Rg Tested0.020 at VGS = 4.5 V 4 Material categorization:For definitions of compliance please see12 0.024 at VGS = 2.5 V 4 13.1 nCwww.vishay.com/doc?999120.030 at VGS = 1.8 V 4APPLICATIONS L
Datasheet: SI1419DH , SI1422DH , SI1424EDH , SI1426DH , SI1427EDH , SI1428EDH , SI1431DH , SI1433DH , IRF9540 , SI1442DH , SI1443EDH , SI1450DH , SI1467DH , SI1469DH , SI1470DH , SI1471DH , SI1473DH .
History: AOT12N40 | APT6013B2FLL | FQP3N40 | QM4803S | WFU730 | SVF7N65S | IPP60R600CP
Keywords - SI1441EDH MOSFET datasheet
SI1441EDH cross reference
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SI1441EDH substitution
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History: AOT12N40 | APT6013B2FLL | FQP3N40 | QM4803S | WFU730 | SVF7N65S | IPP60R600CP



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