All MOSFET. SI1443EDH Datasheet

 

SI1443EDH Datasheet and Replacement


   Type Designator: SI1443EDH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 220 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: SOT-363
 

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SI1443EDH Datasheet (PDF)

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SI1443EDH

New Product Si1443EDHVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) Typical ESD Performance 1500 V HBM 100 % Rg Tested0.054 at VGS = - 10 V - 4a Material categorization:- 30 0.062 at VGS = - 4.5 V - 4a 8.6 nCFor definitions of compliance please see0.085 at VGS = - 2.5 V -

 9.1. Size:262K  vishay
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SI1443EDH

New ProductSi1442DHVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)a Qg (Typ.) 100 % Rg Tested0.020 at VGS = 4.5 V 4 Material categorization:For definitions of compliance please see12 0.024 at VGS = 2.5 V 4 13.1 nCwww.vishay.com/doc?999120.030 at VGS = 1.8 V 4APPLICATIONS L

 9.2. Size:233K  vishay
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SI1443EDH

New ProductSi1441EDHVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.041 at VGS = - 4.5 V - 4 TrenchFET Power MOSFET- 20 0.054 at VGS = - 2.5 V - 4 12.5 nC Typical ESD Performance 1500 V 100 % Rg Tested0.100 at VGS = - 1.8 V - 4 Compli

Datasheet: SI1424EDH , SI1426DH , SI1427EDH , SI1428EDH , SI1431DH , SI1433DH , SI1441EDH , SI1442DH , 2SK3878 , SI1450DH , SI1467DH , SI1469DH , SI1470DH , SI1471DH , SI1473DH , SI1480DH , SI1488DH .

History: PE532DY | OSG60R1K8PF

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