SI1443EDH
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI1443EDH
Marking Code: BT*
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 220
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.054
Ohm
Package:
SOT-363
SI1443EDH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI1443EDH
Datasheet (PDF)
..1. Size:261K vishay
si1443edh.pdf 
New Product Si1443EDHVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) Typical ESD Performance 1500 V HBM 100 % Rg Tested0.054 at VGS = - 10 V - 4a Material categorization:- 30 0.062 at VGS = - 4.5 V - 4a 8.6 nCFor definitions of compliance please see0.085 at VGS = - 2.5 V -
9.1. Size:262K vishay
si1442dh.pdf
New ProductSi1442DHVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)a Qg (Typ.) 100 % Rg Tested0.020 at VGS = 4.5 V 4 Material categorization:For definitions of compliance please see12 0.024 at VGS = 2.5 V 4 13.1 nCwww.vishay.com/doc?999120.030 at VGS = 1.8 V 4APPLICATIONS L
9.2. Size:233K vishay
si1441edh.pdf
New ProductSi1441EDHVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.041 at VGS = - 4.5 V - 4 TrenchFET Power MOSFET- 20 0.054 at VGS = - 2.5 V - 4 12.5 nC Typical ESD Performance 1500 V 100 % Rg Tested0.100 at VGS = - 1.8 V - 4 Compli
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