All MOSFET. IRFR9110 Datasheet

 

IRFR9110 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFR9110
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.7(max) nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 94 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO252

 IRFR9110 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR9110 Datasheet (PDF)

 ..2. Size:1828K  international rectifier
irfr9110pbf irfu9110pbf.pdf

IRFR9110 IRFR9110

PD - 95324AIRFR9110PbFIRFU9110PbF Lead-Free12/14/04Document Number: 91279 www.vishay.com1IRFR/U9110PbFDocument Number: 91279 www.vishay.com2IRFR/U9110PbFDocument Number: 91279 www.vishay.com3IRFR/U9110PbFDocument Number: 91279 www.vishay.com4IRFR/U9110PbFDocument Number: 91279 www.vishay.com5IRFR/U9110PbFDocument Number: 91279 www.vishay.com6

 ..3. Size:172K  international rectifier
irfr9110.pdf

IRFR9110 IRFR9110

 ..4. Size:1477K  vishay
irfr9110 irfu9110 sihfr9110 sihfu9110.pdf

IRFR9110 IRFR9110

IRFR9110, IRFU9110, SiHFR9110, SiHFU9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100 Definition Dynamic dV/dt RatingRDS(on) ()VGS = - 10 V 1.2 Repetitive Avalanche RatedQg (Max.) (nC) 8.7 Surface Mount (IRFR9110, SiHFR9110)Qgs (nC) 2.2 Straight Lead (IRFU9110, SiHFU9110) Available in Tape

 ..5. Size:798K  vishay
irfr9110pbf irfu9110pbf sihfr9110 sihfu9110.pdf

IRFR9110 IRFR9110

IRFR9110, IRFU9110, SiHFR9110, SiHFU9110www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100 Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2 Surface Mount (IRFR9110, SiHFR9110)Qg (Max.) (nC) 8.7 Straight Lead (IRFU9110, SiHFU9110)Qgs (nC) 2.2 Available in Tape and ReelQgd (nC) 4.1 P-Channel

 ..6. Size:1371K  vishay
irfr9110 irfu9110 sihfr9110 sihfu9110 2.pdf

IRFR9110 IRFR9110

IRFR9110, IRFU9110, SiHFR9110, SiHFU9110Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* Surface Mount (IRFR9110/SiHFR9110)COMPLIANTQg (Max.) (nC) 8.7 Straight Lead (IRFU9110/SiHFU9110)Qgs (nC) 2.2 Available in Tape and ReelQgd (nC) 4.1

 8.2. Size:173K  international rectifier
irfr9120.pdf

IRFR9110 IRFR9110

 8.3. Size:257K  international rectifier
irfr9120npbf irfu9120npbf.pdf

IRFR9110 IRFR9110

PD-95020AIRFR9120NPbFIRFU9120NPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR9120N)l Straight Lead (IRFU9120N)l Advanced Process TechnologyRDS(on) = 0.48Gl Fast Switchingl Fully Avalanche RatedID = -6.6ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing

 8.4. Size:117K  international rectifier
irfr9120n.pdf

IRFR9110 IRFR9110

PD - 9.1507AIRFR/U9120NPRELIMINARYHEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -100V Surface Mount (IRFR9120N) Straight Lead (IRFU9120N)RDS(on) = 0.48 Advanced Process TechnologyG Fast SwitchingID = -6.6A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie

 8.5. Size:1077K  international rectifier
irfr9120pbf irfu9120pbf.pdf

IRFR9110 IRFR9110

PD - 95096AIRFR9120PbFIRFU9120PbF Lead-Free1/10/05Document Number: 91280 www.vishay.com1IRFR/U9120PbFDocument Number: 91280 www.vishay.com2IRFR/U9120PbFDocument Number: 91280 www.vishay.com3IRFR/U9120PbFDocument Number: 91280 www.vishay.com4IRFR/U9120PbFDocument Number: 91280 www.vishay.com5IRFR/U9120PbFDocument Number: 91280 www.vishay.com6I

 8.6. Size:1098K  vishay
irfr9120pbf sihfr9120 sihfu9120.pdf

IRFR9110 IRFR9110

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100 Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60 Surface Mount (IRFR9120, SiHFR9120)Qg (Max.) (nC) 18 Straight Lead (IRFU9120, SiHFU9120)Qgs (nC) 3.0 Available in Tape and ReelQgd (nC) 9.0 P-Channel

 8.7. Size:1885K  vishay
irfr9120 irfu9120 sihfr9120 sihfu9120.pdf

IRFR9110 IRFR9110

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* Surface Mount (IRFR9120/SiHFR9120)COMPLIANTQg (Max.) (nC) 18 Straight Lead (IRFU9120/SiHFU9120)Qgs (nC) 3.0 Available in Tape and ReelQgd (nC) 9.0

 8.8. Size:257K  infineon
irfr9120npbf irfu9120npbf.pdf

IRFR9110 IRFR9110

PD-95020AIRFR9120NPbFIRFU9120NPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR9120N)l Straight Lead (IRFU9120N)l Advanced Process TechnologyRDS(on) = 0.48Gl Fast Switchingl Fully Avalanche RatedID = -6.6ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing

 8.9. Size:911K  cn vbsemi
irfr9120ntrpbf.pdf

IRFR9110 IRFR9110

IRFR9120NTRPBFwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switc

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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