SI1489EDH MOSFET Datasheet: P-Ch, 8V, 2A. Full specification with pinout and replacement list

SI1489EDH Specs and Replacement

Type Designator: SI1489EDH

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: SOT-363

SI1489EDH substitution

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SI1489EDH datasheet

..1. Size:259K vishay
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New Product Si1489EDH Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.048 at VGS = - 4.5 V - 2.0e TrenchFET Power MOSFET 0.059 at VGS = - 2.5 V - 2.0e 100 % Rg Tested 0.073 at VGS = - 1.8 V - 2.0e 10.5 nC - 8 Typical ESD Performance 2000 V in HB... See More ⇒

9.1. Size:110K vishay
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Si1488DH Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.049 at VGS = 4.5 V 6.1a TrenchFET Power MOSFET 20 0.056 at VGS = 2.5 V 5.7 6.0 100 % Rg and UIS Tested 0.065 at VGS = 1.8 V 5.3 Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 ... See More ⇒

9.2. Size:244K vishay
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Si1480DH Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.200 at VGS = 10 V 2.6a For definitions of compliance please see 100 1.8 0.320 at VGS = 4.5 V 2.2 www.vishay.com/doc?99912 APPLICATIONS Load Switches DC/DC Co... See More ⇒

Detailed specifications: SI1450DH, SI1467DH, SI1469DH, SI1470DH, SI1471DH, SI1473DH, SI1480DH, SI1488DH, IRF9540N, SI1499DH, SI1539CDL, SI1551DL, SI1553CDL, SI1555DL, SI1563DH, SI1563EDH, SI1865DDL