All MOSFET. SI2304BDS Datasheet

 

SI2304BDS Datasheet and Replacement


   Type Designator: SI2304BDS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12.5 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT-23
 

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SI2304BDS Datasheet (PDF)

 ..1. Size:186K  vishay
si2304bds.pdf pdf_icon

SI2304BDS

Si2304BDSVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.070 at VGS = 10 V 3.2 TrenchFET Power MOSFET30 2.60.105 at VGS = 4.5 V 2.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-236(SOT-23)G 13 DS 2Top ViewSi2304BDS

 8.1. Size:270K  philips
si2304ds.pdf pdf_icon

SI2304BDS

SI2304DSN-channel enhancement mode field-effect transistorRev. 01 17 August 2001 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technologyProduct availability:SI2304DS in SOT23.2. Features TrenchMOS technology Very fast switching Subminiature surface mount package.3. Applications Batte

 8.2. Size:236K  vishay
si2304dds.pdf pdf_icon

SI2304BDS

New ProductSi2304DDSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.060 at VGS = 10 V TrenchFET Power MOSFET3.630 2.1 nC 100 % Rg Tested0.075 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterT

 8.3. Size:233K  vishay
si2304dd.pdf pdf_icon

SI2304BDS

New ProductSi2304DDSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.060 at VGS = 10 V TrenchFET Power MOSFET3.630 2.1 nC 100 % Rg Tested0.075 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterT

Datasheet: SI2301CDS , SI2301-TP , SI2302ADS , SI2302ADS-T1 , SI2302CDS , SI2302DDS , SI2302-TP , SI2303CDS , P0903BDG , SI2304DDS , SI2305ADS , SI2305CDS , SI2306BDS , SI2307CDS , SI2308BDS , SI2309CDS , SI2311DS .

History: SSM3K335R | NVMFS5C404N | RU190N10Q | KRF7379

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