All MOSFET. SI2304DDS Datasheet

 

SI2304DDS MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI2304DDS
   Marking Code: P4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 3.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.6 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23

 SI2304DDS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI2304DDS Datasheet (PDF)

 ..1. Size:236K  vishay
 si2304dds.pdf

SI2304DDS SI2304DDS

New ProductSi2304DDSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.060 at VGS = 10 V TrenchFET Power MOSFET3.630 2.1 nC 100 % Rg Tested0.075 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterT

 6.1. Size:233K  vishay
 si2304dd.pdf

SI2304DDS SI2304DDS

New ProductSi2304DDSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.060 at VGS = 10 V TrenchFET Power MOSFET3.630 2.1 nC 100 % Rg Tested0.075 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterT

 7.1. Size:270K  philips
 si2304ds.pdf

SI2304DDS SI2304DDS

SI2304DSN-channel enhancement mode field-effect transistorRev. 01 17 August 2001 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technologyProduct availability:SI2304DS in SOT23.2. Features TrenchMOS technology Very fast switching Subminiature surface mount package.3. Applications Batte

 7.2. Size:52K  vishay
 si2304ds.pdf

SI2304DDS SI2304DDS

Si2304DSVishay SiliconixN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.117 @ VGS = 10 V 2.530300.190 @ VGS = 4.5 V 2.0TO-236(SOT-23)G 13 DS 2Top ViewSi2304DS (A4)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-Source Voltage VGS "20TA= 25_C 2

 7.3. Size:1510K  kexin
 si2304ds.pdf

SI2304DDS SI2304DDS

SMD Type MOSFETN-Channel Enhancement MOSFET SI2304DS (KI2304DS)SOT-23Unit: mm Features+0.12.9-0.1+0.10.4 -0.1 VDS (V) = 30V3 RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

 7.4. Size:1554K  kexin
 si2304ds-3.pdf

SI2304DDS SI2304DDS

SMD Type MOSFETN-Channel Enhancement MOSFET SI2304DS (KI2304DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) = 30V RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

 7.5. Size:1555K  kexin
 si2304ds ki2304ds.pdf

SI2304DDS SI2304DDS

SMD Type MOSFETN-Channel Enhancement MOSFET SI2304DS (KI2304DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) = 30V RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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