All MOSFET. SI2323CDS Datasheet

 

SI2323CDS Datasheet and Replacement


   Type Designator: SI2323CDS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: SOT-23
 

 SI2323CDS substitution

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SI2323CDS Datasheet (PDF)

 ..1. Size:94K  vishay
si2323cd si2323cds.pdf pdf_icon

SI2323CDS

Si2323CDSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.039 at VGS = - 4.5 V TrenchFET Power MOSFET- 6e 100 % Rg Tested- 20 0.050 at VGS = - 2.5 V - 5.8 9 nC Compliant to RoHS Directive 2002/95/EC0.063 at VGS = - 1.8 V - 5.1APPLI

 ..2. Size:217K  vishay
si2323cds.pdf pdf_icon

SI2323CDS

Si2323CDSVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () 100 % Rg TestedID (A)a Qg (Typ.) Material categorization:0.039 at VGS = -4.5 V -6eFor definitions of compliance please see-20 0.050 at VGS = -2.5 V -5.8 9 nCwww.vishay.com/doc?999120.063 at VGS = -1.8 V -5.1APPLICATIONS

 0.1. Size:866K  cn vbsemi
si2323cds-t1-ge3.pdf pdf_icon

SI2323CDS

SI2323CDS-T1-GE3www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter

 8.1. Size:211K  vishay
si2323dds.pdf pdf_icon

SI2323CDS

Si2323DDSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)d Qg (Typ.) 100 % Rg Tested Material categorization:0.039 at VGS = - 4.5 V - 5.3For definitions of compliance please see- 20 0.050 at VGS = - 2.5 V - 4.7 13.6 nCwww.vishay.com/doc?999120.075 at VGS = - 1.8 V - 3.8APPLICATION

Datasheet: SI2309CDS , SI2311DS , SI2312BDS , SI2312CDS , SI2316BDS , SI2316DS , SI2319CDS , SI2321 , AO3401 , SI2323DDS , SI2327DS , SI2329DS , SI2331DS , SI2333DDS , SI2334DS , SI2336DS , SI2338DS .

History: IPB80N06S2L-11 | SI8410DB | AP30T10GK

Keywords - SI2323CDS MOSFET datasheet

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 SI2323CDS equivalent finder
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