SI2323CDS PDF and Equivalents Search

 

SI2323CDS Specs and Replacement

Type Designator: SI2323CDS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: SOT-23

SI2323CDS substitution

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SI2323CDS datasheet

 ..1. Size:94K  vishay
si2323cd si2323cds.pdf pdf_icon

SI2323CDS

Si2323CDS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.039 at VGS = - 4.5 V TrenchFET Power MOSFET - 6e 100 % Rg Tested - 20 0.050 at VGS = - 2.5 V - 5.8 9 nC Compliant to RoHS Directive 2002/95/EC 0.063 at VGS = - 1.8 V - 5.1 APPLI... See More ⇒

 ..2. Size:217K  vishay
si2323cds.pdf pdf_icon

SI2323CDS

Si2323CDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) 100 % Rg Tested ID (A)a Qg (Typ.) Material categorization 0.039 at VGS = -4.5 V -6e For definitions of compliance please see -20 0.050 at VGS = -2.5 V -5.8 9 nC www.vishay.com/doc?99912 0.063 at VGS = -1.8 V -5.1 APPLICATIONS ... See More ⇒

 0.1. Size:866K  cn vbsemi
si2323cds-t1-ge3.pdf pdf_icon

SI2323CDS

SI2323CDS-T1-GE3 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter ... See More ⇒

 8.1. Size:211K  vishay
si2323dds.pdf pdf_icon

SI2323CDS

Si2323DDS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)d Qg (Typ.) 100 % Rg Tested Material categorization 0.039 at VGS = - 4.5 V - 5.3 For definitions of compliance please see - 20 0.050 at VGS = - 2.5 V - 4.7 13.6 nC www.vishay.com/doc?99912 0.075 at VGS = - 1.8 V - 3.8 APPLICATION... See More ⇒

Detailed specifications: SI2309CDS, SI2311DS, SI2312BDS, SI2312CDS, SI2316BDS, SI2316DS, SI2319CDS, SI2321, P60NF06, SI2323DDS, SI2327DS, SI2329DS, SI2331DS, SI2333DDS, SI2334DS, SI2336DS, SI2338DS

Keywords - SI2323CDS MOSFET specs

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