SI2323CDS
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI2323CDS
Marking Code: P3
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 4.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 23
nS
Cossⓘ -
Output Capacitance: 155
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039
Ohm
Package:
SOT-23
SI2323CDS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI2323CDS
Datasheet (PDF)
..1. Size:94K vishay
si2323cd si2323cds.pdf 
Si2323CDSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.039 at VGS = - 4.5 V TrenchFET Power MOSFET- 6e 100 % Rg Tested- 20 0.050 at VGS = - 2.5 V - 5.8 9 nC Compliant to RoHS Directive 2002/95/EC0.063 at VGS = - 1.8 V - 5.1APPLI
..2. Size:217K vishay
si2323cds.pdf
Si2323CDSVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () 100 % Rg TestedID (A)a Qg (Typ.) Material categorization:0.039 at VGS = -4.5 V -6eFor definitions of compliance please see-20 0.050 at VGS = -2.5 V -5.8 9 nCwww.vishay.com/doc?999120.063 at VGS = -1.8 V -5.1APPLICATIONS
0.1. Size:866K cn vbsemi
si2323cds-t1-ge3.pdf
SI2323CDS-T1-GE3www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter
8.1. Size:211K vishay
si2323dds.pdf
Si2323DDSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)d Qg (Typ.) 100 % Rg Tested Material categorization:0.039 at VGS = - 4.5 V - 5.3For definitions of compliance please see- 20 0.050 at VGS = - 2.5 V - 4.7 13.6 nCwww.vishay.com/doc?999120.075 at VGS = - 1.8 V - 3.8APPLICATION
8.2. Size:188K vishay
si2323ds.pdf
Si2323DSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.039 at VGS = - 4.5 V - 4.7 TrenchFET Power MOSFET 0.052 at VGS = - 2.5 V - 20 - 4.10.068 at VGS = - 1.8 V - 3.5APPLICATIONS Load Switch PA SwitchTO-236(SOT-23)G 13 DS 2Top ViewS
8.3. Size:454K shenzhen
si2323.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2323P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)APPLICATIONS0.043 @ VGS = -4.5 V -4.0D Load Switch-20 0.054 @ VGS = -2.5 V - 4.0D PA Switch0.075 @ VGS = -1.8 V - 2.0TO-236(SOT-23)G 13 DS 2Top ViewSi2323 (D3)**Marking CodeABSOLUTE MAXIMUM RATINGS
8.4. Size:1691K kexin
si2323ds.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2323DS (KI2323DS)SOT-23Unit: mm Features2.9+0.1-0.1+0.10.4 -0.1 VDS (V) =-20V3 ID =-4.7A (VGS =-4.5V) RDS(ON) 39m (VGS =-4.5V) RDS(ON) 52m (VGS =-2.5V)1 2 RDS(ON) 68m (VGS =-1.8V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain A
8.5. Size:1762K kexin
si2323ds-3.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2323DS (KI2323DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) =-20V ID =-4.7A (VGS =-4.5V) RDS(ON) 39m (VGS =-4.5V)1 2 RDS(ON) 52m (VGS =-2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 68m (VGS =-1.8V)G 13 D1. GateS 2 2. Source3. Drain
8.6. Size:905K cn vbsemi
si2323ds-t1.pdf
SI2323DS-T1www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT
8.7. Size:868K cn vbsemi
si2323dds-t1-ge3.pdf
SI2323DDS-T1-GE3www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter
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