All MOSFET. SI2333DDS Datasheet

 

SI2333DDS MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI2333DDS
   Marking Code: O4
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 255 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOT-23

 SI2333DDS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI2333DDS Datasheet (PDF)

 ..1. Size:226K  vishay
 si2333dds.pdf

SI2333DDS SI2333DDS

Si2333DDSVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg Tested Material categorization:0.028 at VGS = - 4.5 V - 6eFor definitions of compliance please see0.032 at VGS = - 3.7 V - 6ewww.vishay.com/doc?99912- 12 0.040 at VGS = - 2.5 V - 6e 9 nC0.063 at

 0.1. Size:1472K  cn vbsemi
 si2333dds-t1.pdf

SI2333DDS SI2333DDS

SI2333DDS-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATION

 7.1. Size:186K  vishay
 si2333ds.pdf

SI2333DDS SI2333DDS

Si2333DSVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.032 at VGS = - 4.5 V - 5.3 TrenchFET Power MOSFET 0.042 at VGS = - 2.5 V - 12 - 4.6APPLICATIONS0.059 at VGS = - 1.8 V - 3.9 Load Switch PA SwitchTO-236(SOT-23)G 13 DS 2Top ViewS

 7.2. Size:1223K  kexin
 si2333ds.pdf

SI2333DDS SI2333DDS

SMD Type MOSFETP-Channel MOSFETSI2333DS (KI2333DS)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) =-12V ID =-5.3 A (VGS =-4.5V)1 2 RDS(ON) 32m (VGS =-4.5V) +0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.1 RDS(ON) 42m (VGS =-2.5V) RDS(ON) 59m (VGS =-1.8V)1. Gate2. Source3. DrainG 13 DS 2 Absolute Max

 7.3. Size:1240K  kexin
 si2333ds-3.pdf

SI2333DDS SI2333DDS

SMD Type MOSFETP-Channel MOSFETSI2333DS (KI2333DS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-12V ID =-5.3 A (VGS =-4.5V)1 2 RDS(ON) 32m (VGS =-4.5V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 42m (VGS =-2.5V) RDS(ON) 59m (VGS =-1.8V)1. Gate2. Source3. DrainG 13 DS 2 Absolute

 7.4. Size:866K  cn vbsemi
 si2333ds-t1-ge3.pdf

SI2333DDS SI2333DDS

SI2333DS-T1-GE3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICAT

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