SI2374DS PDF and Equivalents Search

 

SI2374DS Specs and Replacement

Type Designator: SI2374DS

Marking Code: F5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1 V

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT-23

SI2374DS substitution

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SI2374DS datasheet

 ..1. Size:249K  vishay
si2374ds.pdf pdf_icon

SI2374DS

Si2374DS www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) d Qg (TYP.) 100 % Rg tested 0.030 at VGS = 4.5 V 5.9 Material categorization 20 0.034 at VGS = 2.5 V 5.5 7.7 nC For definitions of compliance please see 0.041 at VGS = 1.8 V 5 www.vishay.com/doc?99912 APPLICATIONS ... See More ⇒

 9.1. Size:126K  vishay
si2377eds.pdf pdf_icon

SI2374DS

New Product Si2377EDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.061 at VGS = - 4.5 V - 4.4 TrenchFET Power MOSFET 0.080 at VGS = - 2.5 V - 3.8 100 % Rg Tested - 20 7.6 nC 0.110 at VGS = - 1.8 V - 3.3 Typical ESD Performance 2000 V B... See More ⇒

 9.2. Size:126K  vishay
si2377ed.pdf pdf_icon

SI2374DS

New Product Si2377EDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.061 at VGS = - 4.5 V - 4.4 TrenchFET Power MOSFET 0.080 at VGS = - 2.5 V - 3.8 100 % Rg Tested - 20 7.6 nC 0.110 at VGS = - 1.8 V - 3.3 Typical ESD Performance 2000 V B... See More ⇒

 9.3. Size:215K  vishay
si2371eds.pdf pdf_icon

SI2374DS

Si2371EDS Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg Tested Built-in ESD Protection 0.045 at VGS = - 10 V - 4.8 - Typical ESD Performance 3000 V 0.053 at VGS = - 4.5 V - 4.4 10.6 nC - 30 Material categorization 0.080 at VGS = - 2.5 V - 3.6 For definition... See More ⇒

Detailed specifications: SI2341, SI2342DS, SI2343CDS, SI2347DS, SI2351DS, SI2365EDS, SI2367DS, SI2371EDS, MMIS60R580P, SI2392ADS, SI3127DV, SI3134K, SI3139K, SI3404, SI3407DV, SI3410DV, SI3415

Keywords - SI2374DS MOSFET specs

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