SI2374DS Specs and Replacement
Type Designator: SI2374DS
Marking Code: F5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1 V
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT-23
SI2374DS substitution
- MOSFET ⓘ Cross-Reference Search
SI2374DS datasheet
si2374ds.pdf
Si2374DS www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) d Qg (TYP.) 100 % Rg tested 0.030 at VGS = 4.5 V 5.9 Material categorization 20 0.034 at VGS = 2.5 V 5.5 7.7 nC For definitions of compliance please see 0.041 at VGS = 1.8 V 5 www.vishay.com/doc?99912 APPLICATIONS ... See More ⇒
si2377eds.pdf
New Product Si2377EDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.061 at VGS = - 4.5 V - 4.4 TrenchFET Power MOSFET 0.080 at VGS = - 2.5 V - 3.8 100 % Rg Tested - 20 7.6 nC 0.110 at VGS = - 1.8 V - 3.3 Typical ESD Performance 2000 V B... See More ⇒
si2377ed.pdf
New Product Si2377EDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.061 at VGS = - 4.5 V - 4.4 TrenchFET Power MOSFET 0.080 at VGS = - 2.5 V - 3.8 100 % Rg Tested - 20 7.6 nC 0.110 at VGS = - 1.8 V - 3.3 Typical ESD Performance 2000 V B... See More ⇒
si2371eds.pdf
Si2371EDS Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg Tested Built-in ESD Protection 0.045 at VGS = - 10 V - 4.8 - Typical ESD Performance 3000 V 0.053 at VGS = - 4.5 V - 4.4 10.6 nC - 30 Material categorization 0.080 at VGS = - 2.5 V - 3.6 For definition... See More ⇒
Detailed specifications: SI2341, SI2342DS, SI2343CDS, SI2347DS, SI2351DS, SI2365EDS, SI2367DS, SI2371EDS, MMIS60R580P, SI2392ADS, SI3127DV, SI3134K, SI3139K, SI3404, SI3407DV, SI3410DV, SI3415
Keywords - SI2374DS MOSFET specs
SI2374DS cross reference
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