SI3420 Datasheet and Replacement

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components CA 91311SI3420Phone: (818) 701-4933Fax: (818) 701-4939FeaturesN-Channel High dense cell design for extremely low RDS(ON) Rugged and reliableEnhancement Mode Lead free product is acquired SOT-23 PackageField Effect Transistor Marking Code: R20 Epoxy me

Si3420DVVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A)200 3.7 @ VGS = 10 V 0.5TSOP-6(1, 2, 5, 6) DTop View1 63 mm52(3) G3 42.85 mm(4) SOrdering Information: Si3420DV-T1N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 secs Steady State UnitDrai

SI3420AFeatures High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS MOSFETCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range : -55

Si3429EDVwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a, e Qg (TYP.) 100 % Rg tested0.0210 at VGS = -4.5 V -8 Built-in ESD protection -20 0.0240 at VGS = -2.5 V -8 43.2 nC- Typical ESD performance 3000 V0.0380 at VGS = -1.8 V -8 Material categorization: For defini

Si3421DVVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)d,e Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.0192 at VGS = -10 V -8For definitions of compliance please see -30 0.0232 at VGS = -6 V -8 21 nCwww.vishay.com/doc?999120.0270 at VGS = -4.5 V -8AvailableTSO

Si3424BDVVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.028 at VGS = 10 V 8a TrenchFET Power MOSFET30 6.2 100 % Rg Tested0.038 at VGS = 4.5 V 7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable DevicesTSOP

Si3424DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.028 at VGS = 10 V 6.7 TrenchFET Power MOSFETs300.038 at VGS = 4.5 V 5.7 Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(1, 2, 5, 6) D1 63 mm52(3) G3 42.85 mm(4) SOrdering I

Si3424CDVVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a, b Qg (Typ.)Definition0.026 at VGS = 10 V TrenchFET Power MOSFET830 4.2 100 % Rg Tested0.032 at VGS = 4.5 V 8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Devices

Si3422DVNew ProductVishay SiliconixN-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)200 5 @ VGS = 10 V "0.42(1, 2, 5, 6) DTSOP-6Top View1 6(3) G3 mm523 4(4) S2.85 mmN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 secs Steady State UnitDrain-Source Voltage VDS 200VVGate-Source Voltag

Si3424BDVVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.028 at VGS = 10 V 8a TrenchFET Power MOSFET30 6.2 100 % Rg Tested0.038 at VGS = 4.5 V 7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable DevicesTSOP