SI3420
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI3420
Marking Code: R20
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 164
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024
Ohm
Package:
SOT-23
SI3420
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI3420
Datasheet (PDF)
..1. Size:465K vishay
si3420.pdf 
MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components CA 91311SI3420Phone: (818) 701-4933Fax: (818) 701-4939FeaturesN-Channel High dense cell design for extremely low RDS(ON) Rugged and reliableEnhancement Mode Lead free product is acquired SOT-23 PackageField Effect Transistor Marking Code: R20 Epoxy me
0.1. Size:89K vishay
si3420dv.pdf
Si3420DVVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A)200 3.7 @ VGS = 10 V 0.5TSOP-6(1, 2, 5, 6) DTop View1 63 mm52(3) G3 42.85 mm(4) SOrdering Information: Si3420DV-T1N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 secs Steady State UnitDrai
0.2. Size:625K mcc
si3420a.pdf
SI3420AFeatures High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS MOSFETCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range : -55
9.1. Size:240K vishay
si3429edv.pdf
Si3429EDVwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a, e Qg (TYP.) 100 % Rg tested0.0210 at VGS = -4.5 V -8 Built-in ESD protection -20 0.0240 at VGS = -2.5 V -8 43.2 nC- Typical ESD performance 3000 V0.0380 at VGS = -1.8 V -8 Material categorization: For defini
9.2. Size:216K vishay
si3421dv.pdf
Si3421DVVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)d,e Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.0192 at VGS = -10 V -8For definitions of compliance please see -30 0.0232 at VGS = -6 V -8 21 nCwww.vishay.com/doc?999120.0270 at VGS = -4.5 V -8AvailableTSO
9.3. Size:204K vishay
si3424bdv.pdf
Si3424BDVVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.028 at VGS = 10 V 8a TrenchFET Power MOSFET30 6.2 100 % Rg Tested0.038 at VGS = 4.5 V 7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable DevicesTSOP
9.4. Size:180K vishay
si3424dv.pdf
Si3424DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.028 at VGS = 10 V 6.7 TrenchFET Power MOSFETs300.038 at VGS = 4.5 V 5.7 Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(1, 2, 5, 6) D1 63 mm52(3) G3 42.85 mm(4) SOrdering I
9.5. Size:211K vishay
si3424cdv.pdf
Si3424CDVVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a, b Qg (Typ.)Definition0.026 at VGS = 10 V TrenchFET Power MOSFET830 4.2 100 % Rg Tested0.032 at VGS = 4.5 V 8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Devices
9.6. Size:53K vishay
si3422dv.pdf
Si3422DVNew ProductVishay SiliconixN-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)200 5 @ VGS = 10 V "0.42(1, 2, 5, 6) DTSOP-6Top View1 6(3) G3 mm523 4(4) S2.85 mmN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 secs Steady State UnitDrain-Source Voltage VDS 200VVGate-Source Voltag
9.7. Size:203K vishay
si3424bd.pdf
Si3424BDVVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.028 at VGS = 10 V 8a TrenchFET Power MOSFET30 6.2 100 % Rg Tested0.038 at VGS = 4.5 V 7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable DevicesTSOP
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
