SI3429EDV PDF and Equivalents Search

 

SI3429EDV Specs and Replacement

Type Designator: SI3429EDV

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 395 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TSOP-6

SI3429EDV substitution

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SI3429EDV datasheet

 ..1. Size:240K  vishay
si3429edv.pdf pdf_icon

SI3429EDV

Si3429EDV www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a, e Qg (TYP.) 100 % Rg tested 0.0210 at VGS = -4.5 V -8 Built-in ESD protection -20 0.0240 at VGS = -2.5 V -8 43.2 nC - Typical ESD performance 3000 V 0.0380 at VGS = -1.8 V -8 Material categorization For defini... See More ⇒

 9.1. Size:216K  vishay
si3421dv.pdf pdf_icon

SI3429EDV

Si3421DV Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)d,e Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.0192 at VGS = -10 V -8 For definitions of compliance please see -30 0.0232 at VGS = -6 V -8 21 nC www.vishay.com/doc?99912 0.0270 at VGS = -4.5 V -8 Available TSO... See More ⇒

 9.2. Size:204K  vishay
si3424bdv.pdf pdf_icon

SI3429EDV

Si3424BDV Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.028 at VGS = 10 V 8a TrenchFET Power MOSFET 30 6.2 100 % Rg Tested 0.038 at VGS = 4.5 V 7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices TSOP... See More ⇒

 9.3. Size:180K  vishay
si3424dv.pdf pdf_icon

SI3429EDV

Si3424DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.028 at VGS = 10 V 6.7 TrenchFET Power MOSFETs 30 0.038 at VGS = 4.5 V 5.7 Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View (1, 2, 5, 6) D 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering I... See More ⇒

Detailed specifications: SI3410DV, SI3415, SI3417DV, SI3420, SI3421DV, SI3424BDV, SI3424CDV, SI3424DV, IRFP460, SI3430DV, SI3433CDV, SI3434, SI3434DV, SI3438DV, SI3440DV, SI3441BDV, SI3442BDV

Keywords - SI3429EDV MOSFET specs

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