SI3442DV PDF and Equivalents Search

 

SI3442DV Specs and Replacement

Type Designator: SI3442DV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SUPERSOT-6

SI3442DV substitution

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SI3442DV datasheet

 ..1. Size:71K  vishay
si3442dv.pdf pdf_icon

SI3442DV

March 2001 SI3442DV N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 4.1 A, 20 V. RDS(ON) = 0.06 @ VGS = 4.5 V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.075 @ VGS =2.7 V. high cell density, DMOS technology. This very high density process is tai... See More ⇒

 8.1. Size:179K  vishay
si3442bdv.pdf pdf_icon

SI3442DV

Si3442BDV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.057 at VGS = 4.5 V 4.2 TrenchFET Power MOSFET 20 0.090 at VGS = 2.5 V 3.4 Compliant to RoHS Directive 2002/95/EC TSOP-6 (1, 2, 5, 6) D Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering... See More ⇒

 8.2. Size:214K  vishay
si3442cdv.pdf pdf_icon

SI3442DV

Si3442CDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.027 at VGS = 10 V 8d For definitions of compliance please see 20 0.030 at VGS = 4.5 V 7.5 4.3 nC www.vishay.com/doc?99912 0.049 at VGS = 2.5 V 6.1 APPLICATIONS TSO... See More ⇒

 8.3. Size:177K  vishay
si3442bd.pdf pdf_icon

SI3442DV

Si3442BDV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.057 at VGS = 4.5 V 4.2 TrenchFET Power MOSFET 20 0.090 at VGS = 2.5 V 3.4 Compliant to RoHS Directive 2002/95/EC TSOP-6 (1, 2, 5, 6) D Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering... See More ⇒

Detailed specifications: SI3433CDV, SI3434, SI3434DV, SI3438DV, SI3440DV, SI3441BDV, SI3442BDV, SI3442CDV, IRF3710, SI3443BDV, SI3443CDV, SI3443DDV, SI3443DVTR, SI3445ADV, SI3445DV, SI3446ADV, SI3447BDV

Keywords - SI3442DV MOSFET specs

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