All MOSFET. SI3476DV Datasheet

 

SI3476DV MOSFET. Datasheet pdf. Equivalent

Type Designator: SI3476DV

SMD Transistor Code: BG*

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 4 nS

Drain-Source Capacitance (Cd): 116 pF

Maximum Drain-Source On-State Resistance (Rds): 0.093 Ohm

Package: TSOP-6

SI3476DV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SI3476DV Datasheet (PDF)

1.1. si3476dv.pdf Size:222K _vishay

SI3476DV
SI3476DV

Si3476DV Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET • 100 % Rg Tested VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) • Material categorization: 0.093 at VGS = 10 V 4.6 For definitions of compliance please see 0.108 at VGS = 6 V 80 4.3 2.6 www.vishay.com/doc?99912 0.126 at VGS = 4.5 V 4 APPLICATIONS • Load Swit

5.1. si3475dv.pdf Size:195K _vishay

SI3476DV
SI3476DV

Si3475DV Vishay Siliconix P-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) Definition 1.61 at VGS = - 10 V - 0.95 TrenchFET Power MOSFET - 200 8 nC 100 % Rg and UIS Tested 1.65 at VGS = - 6 V - 0.93 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Active Clamp Circuits in DC/DC

5.2. si3473cd.pdf Size:224K _vishay

SI3476DV
SI3476DV

New Product Si3473CDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) Definition 0.022 at VGS = - 4.5 V - 8 TrenchFET Power MOSFET PWM Optimized 0.028 at VGS = - 2.5 V - 8 26 nC - 12 Compliant to RoHS Directive 2002/95/EC 0.036 at VGS = - 1.8 V - 8 APPLICATIONS Lo

 5.3. si3471dv.pdf Size:101K _vishay

SI3476DV
SI3476DV

Si3471DV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Definition 0.031 at VGS = - 4.5 V - 6.8 TrenchFET Power MOSFET: 1.8 V Rated 0.040 at VGS = - 2.5 V - 12 - 6.0 Compliant to RoHS Directive 2002/95/EC 0.053 at VGS = - 1.8 V - 5.2 APPLICATIONS Load Switch PA Switch (

5.4. si3473cdv.pdf Size:225K _vishay

SI3476DV
SI3476DV

New Product Si3473CDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) Definition 0.022 at VGS = - 4.5 V - 8 • TrenchFET® Power MOSFET • PWM Optimized 0.028 at VGS = - 2.5 V - 8 26 nC - 12 • Compliant to RoHS Directive 2002/95/EC 0.036 at VGS = - 1.8 V - 8 APPLIC

 5.5. si3474dv.pdf Size:228K _vishay

SI3476DV
SI3476DV

Si3474DV Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) • 100 % Rg and UIS Tested • Material categorization: 0.126 at VGS = 10 V 3.8 For definitions of compliance please see 0.147 at VGS = 6 V 100 3.5 2.9 nC www.vishay.com/doc?99912 0.189 at VGS = 4.5 V 3.1 APPL

5.6. si3471cd.pdf Size:113K _vishay

SI3476DV
SI3476DV

Si3471CDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) Definition 0.027 at VGS = - 4.5 V - 8 TrenchFET Power MOSFET PWM Optimized 0.036 at VGS = - 2.5 V - 8 20 nC - 12 Compliant to RoHS Directive 2002/95/EC 0.048 at VGS = - 1.8 V - 7.5 APPLICATIONS Load Switch

5.7. si3477dv.pdf Size:222K _vishay

SI3476DV
SI3476DV

New Product Si3477DV Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition 0.0175 at VGS = - 4.5 V - 8 • TrenchFET® Power MOSFET - 12 0.023 at VGS = - 2.5 V - 8 28.3 nC • PWM Optimized 0.033 at VGS = - 1.8 V - 8 • 100 % Rg Tested • Compliant to RoHS Direct

5.8. si3473dv.pdf Size:198K _vishay

SI3476DV
SI3476DV

Si3473DV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen free According to IEC61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Definition 0.023 at VGS = - 4.5 V - 7.9 • TrenchFET® Power MOSFET: 1.8 V Rated 0.029 at VGS = - 2.5 V - 7.0 - 12 22 • Ultra-Low On-Resistance 0.041 at VGS = - 1.8 V - 5.9 • Compliant to RoHs Directive 2002/95/

5.9. si3475dv.pdf Size:2025K _kexin

SI3476DV
SI3476DV

SMD Type MOSFET P-Channel MOSFET SI3475DV (KI3475DV) ( ) SOT-23-6 Unit: mm 0.4+0.1 -0.1 6 5 4 ■ Features ● VDS (V) =-200V ● ID =-0.95 A (VGS =-10V) S ● RDS(ON) < 1.61Ω (VGS =-10V) 1 2 3 +0.02 0.15 -0.02 +0.01 ● RDS(ON) < 1.65Ω (VGS =-6V) -0.01 +0.2 -0.1 G 1 Drain 4 Source 2 Drain 5 Drain D 3 Gate 6 Drain ■ Absolute Maximum Ratings Ta = 25℃ Para

Datasheet: SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 , PT4410 , IRFP260N , SI2301 , SI2305 , XP152A12COMR , AO3401 , AO3407 , PT4435 , SM103 , SM104 .

 
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