SI3476DV PDF and Equivalents Search

 

SI3476DV Specs and Replacement

Type Designator: SI3476DV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 116 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.093 Ohm

Package: TSOP-6

SI3476DV substitution

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SI3476DV datasheet

 ..1. Size:222K  vishay
si3476dv.pdf pdf_icon

SI3476DV

Si3476DV Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Material categorization 0.093 at VGS = 10 V 4.6 For definitions of compliance please see 0.108 at VGS = 6 V 80 4.3 2.6 www.vishay.com/doc?99912 0.126 at VGS = 4.5 V 4 APPLICATIONS Load Swit... See More ⇒

 9.1. Size:222K  vishay
si3477dv.pdf pdf_icon

SI3476DV

New Product Si3477DV Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0175 at VGS = - 4.5 V - 8 TrenchFET Power MOSFET - 12 0.023 at VGS = - 2.5 V - 8 28.3 nC PWM Optimized 0.033 at VGS = - 1.8 V - 8 100 % Rg Tested Compliant to RoHS Direct... See More ⇒

 9.2. Size:198K  vishay
si3473dv.pdf pdf_icon

SI3476DV

Si3473DV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen free According to IEC61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.023 at VGS = - 4.5 V - 7.9 TrenchFET Power MOSFET 1.8 V Rated 0.029 at VGS = - 2.5 V - 7.0 - 12 22 Ultra-Low On-Resistance 0.041 at VGS = - 1.8 V - 5.9 Compliant to RoHs Directive 2002/95/... See More ⇒

 9.3. Size:195K  vishay
si3475dv.pdf pdf_icon

SI3476DV

Si3475DV Vishay Siliconix P-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 1.61 at VGS = - 10 V - 0.95 TrenchFET Power MOSFET - 200 8 nC 100 % Rg and UIS Tested 1.65 at VGS = - 6 V - 0.93 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Active Clamp Cir... See More ⇒

Detailed specifications: SI3460DDV, SI3460DV, SI3464DV, SI3465DV, SI3467DV, SI3473CDV, SI3473DV, SI3474DV, IRFB3607, SI3477DV, SI3481DV, SI3483CDV, SI3483DV, SI3493BDV, SI3493DV, SI3495DV, SI3499DV

Keywords - SI3476DV MOSFET specs

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