SI3483DV MOSFET. Datasheet pdf. Equivalent
Type Designator: SI3483DV
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.14 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 4.7 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 10 nS
Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm
Package: TSOP-6
SI3483DV Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI3483DV Datasheet (PDF)
1.1. si3483dv.pdf 
Size:618K _vishay
Si3483DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.035 at VGS = - 10 V - 6.2 • TrenchFET® Power MOSFET - 30 0.053 at VGS = - 4.5 V - 5.0 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch TSOP-6 (4) S Top View 1 6 3 mm (3) G 5 2
4.1. si3483cdv.pdf Size:224K _vishay
New Product Si3483CDV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Definition 0.034 at VGS = - 10 V - 8a • TrenchFET® Power MOSFET - 30 11.5 nC • Compliant to RoHS Directive 2002/95/EC 0.053 at VGS = - 4.5 V - 7 APPLICATIONS • Load Switch TSOP-6 (4) S Top Vi
4.2. si3483cd.pdf Size:222K _vishay
New Product Si3483CDV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Qg (Typ.) Definition 0.034 at VGS = - 10 V - 8a • TrenchFET® Power MOSFET - 30 11.5 nC • Compliant to RoHS Directive 2002/95/EC 0.053 at VGS = - 4.5 V - 7 APPLICATIONS • Load Switch TSOP-6 (4) S Top View 1 6 3 mm
Datasheet: SI3467DV , SI3473CDV , SI3473DV , SI3474DV , SI3476DV , SI3477DV , SI3481DV , SI3483CDV , IRF250 , SI3493BDV , SI3493DV , SI3495DV , SI3499DV , SI3552DV , SI3585CDV , SI3586DV , SI3588DV .
