SI3493BDV Specs and Replacement
Type Designator: SI3493BDV
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.08 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 72 nS
Cossⓘ - Output Capacitance: 285 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0275 Ohm
Package: TSOP-6
SI3493BDV substitution
- MOSFET ⓘ Cross-Reference Search
SI3493BDV datasheet
si3493bdv.pdf
Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) Definition 0.0275 at VGS = - 4.5 V TrenchFET Power MOSFET - 8.0a PWM Optimized - 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 Compliant to RoHS Directiv... See More ⇒
si3493bd.pdf
Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) Definition 0.0275 at VGS = - 4.5 V TrenchFET Power MOSFET - 8.0a PWM Optimized - 20 0.034 at VGS = - 2.5 V - 7.9 26.2 nC 100 % Rg Tested 0.045 at VGS = - 1.8 V - 2.2 Compliant to RoHS Directiv... See More ⇒
si3493ddv.pdf
Si3493DDV www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES TSOP-6 Single TrenchFET Gen III p-channel power MOSFET S 4 RDS(on) rating at VGS = -1.8 V D 5 D 100 % Rg and UIS tested 6 Material categorization for definitions of compliance please see 3 www.vishay.com/doc?99912 G 2 D APPLICATIONS 1 S D Battery management in mobile d... See More ⇒
si3493dv.pdf
Si3493DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.027 at VGS = - 4.5 V - 7 TrenchFET Power MOSFET 1.8 V Rated 0.035 at VGS = - 2.5 V - 6.2 - 20 21 Ultra-Low On-Resistance 0.048 at VGS = - 1.8 V - 5.2 Compliant to RoHS Directive 2002/95/EC... See More ⇒
Detailed specifications: SI3473CDV, SI3473DV, SI3474DV, SI3476DV, SI3477DV, SI3481DV, SI3483CDV, SI3483DV, AON7506, SI3493DV, SI3495DV, SI3499DV, SI3552DV, SI3585CDV, SI3586DV, SI3588DV, SI3590DV
Keywords - SI3493BDV MOSFET specs
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SI3493BDV replacement
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History: AS3400 | PSMN1R4-40YLD
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