SI4154DY Spec and Replacement
Type Designator: SI4154DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 570 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: SO-8
SI4154DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4154DY Specs
si4154dy.pdf
New Product Si4154DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0033 at VGS = 10 V 36 TrenchFET Power MOSFET 40 32.5 nC 100 % Rg and UIS Tested 0.0039 at VGS = 4.5 V 33 Compliant to RoHS Directive 2002/95/EC APPLICATIONS POL ... See More ⇒
si4158dy.pdf
New Product Si4158DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0025 at VGS = 10 V 36.5 100 % Rg Tested 20 40 nC 0.003 at VGS = 4.5 V 33.3 100 % UIS Tested APPLICATIONS Low-Side MOSFET for Synchronous Buck OR-ing SO-8 D SD 1 8 SD ... See More ⇒
si4156dy.pdf
Si4156DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.006 at VGS = 10 V 24 100 % Rg Tested 30 12 nC 0.008 at VGS = 4.5 V 100 % UIS Tested 21 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Conve... See More ⇒
Detailed specifications: SI4116DY , SI4122DY , SI4124DY , SI4126DY , SI4128DY , SI4134DY , SI4136DY , SI4143DY , K2611 , SI4156DY , SI4160DY , SI4162DY , SI4164DY , SI4166DY , SI4168DY , SI4170DY , SI4172DY .
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