SI4172DY MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4172DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 195 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SO-8
SI4172DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4172DY Datasheet (PDF)
si4172dy.pdf
Si4172DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1530 6.8 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 13Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side
si4174dy.pdf
New ProductSi4174DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0095 at VGS = 10 V 17 100 % Rg and UIS Tested30 8 nC0.013 at VGS = 4.5 V 14.5APPLICATIONS Notebook CPU Core- High-Side SwitchSO-8 D SD1 8 SD2
si4176dy.pdf
New ProductSi4176DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.020 at VGS = 10 V 12a TrenchFET Power MOSFET30 4.7 nC0.027 at VGS = 4.5 V 100 % Rg and UIS Tested10.4 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch
si4170dy.pdf
New ProductSi4170DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.0035 at VGS = 10 V 30 100 % Rg TestedCOMPLIANT 30 29 nC0.0045 at VGS = 4.5 V 27 100 % Avalanche TestedAPPLICATIONS Notebook PC Core- Low Side SwitchSO-8DSD1 8
si4178dy.pdf
New ProductSi4178DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.021 at VGS = 10 V 12a TrenchFET Power MOSFET30 3.7 nC0.033 at VGS = 4.5 V 100 % Rg and UIS Tested6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Notebook System
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
