All MOSFET. SI4174DY Datasheet

 

SI4174DY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4174DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: SO-8

 SI4174DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4174DY Datasheet (PDF)

 ..1. Size:252K  vishay
 si4174dy.pdf

SI4174DY SI4174DY

New ProductSi4174DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0095 at VGS = 10 V 17 100 % Rg and UIS Tested30 8 nC0.013 at VGS = 4.5 V 14.5APPLICATIONS Notebook CPU Core- High-Side SwitchSO-8 D SD1 8 SD2

 9.1. Size:253K  vishay
 si4172dy.pdf

SI4174DY SI4174DY

Si4172DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1530 6.8 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 13Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side

 9.2. Size:270K  vishay
 si4176dy.pdf

SI4174DY SI4174DY

New ProductSi4176DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.020 at VGS = 10 V 12a TrenchFET Power MOSFET30 4.7 nC0.027 at VGS = 4.5 V 100 % Rg and UIS Tested10.4 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch

 9.3. Size:268K  vishay
 si4170dy.pdf

SI4174DY SI4174DY

New ProductSi4170DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.0035 at VGS = 10 V 30 100 % Rg TestedCOMPLIANT 30 29 nC0.0045 at VGS = 4.5 V 27 100 % Avalanche TestedAPPLICATIONS Notebook PC Core- Low Side SwitchSO-8DSD1 8

 9.4. Size:276K  vishay
 si4178dy.pdf

SI4174DY SI4174DY

New ProductSi4178DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.021 at VGS = 10 V 12a TrenchFET Power MOSFET30 3.7 nC0.033 at VGS = 4.5 V 100 % Rg and UIS Tested6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Notebook System

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AON6452 | 2SJ450 | IRF60DM206 | PDC3906Z | PHW9N60E | PDC3902X | 2SK1542

 

 
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