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SI4174DY Spec and Replacement


   Type Designator: SI4174DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: SO-8

 SI4174DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4174DY Specs

 ..1. Size:252K  vishay
si4174dy.pdf pdf_icon

SI4174DY

New Product Si4174DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0095 at VGS = 10 V 17 100 % Rg and UIS Tested 30 8 nC 0.013 at VGS = 4.5 V 14.5 APPLICATIONS Notebook CPU Core - High-Side Switch SO-8 D SD 1 8 SD 2... See More ⇒

 9.1. Size:253K  vishay
si4172dy.pdf pdf_icon

SI4174DY

Si4172DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 15 30 6.8 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 13 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side ... See More ⇒

 9.2. Size:270K  vishay
si4176dy.pdf pdf_icon

SI4174DY

New Product Si4176DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.020 at VGS = 10 V 12a TrenchFET Power MOSFET 30 4.7 nC 0.027 at VGS = 4.5 V 100 % Rg and UIS Tested 10.4 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch ... See More ⇒

 9.3. Size:268K  vishay
si4170dy.pdf pdf_icon

SI4174DY

New Product Si4170DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0035 at VGS = 10 V 30 100 % Rg Tested COMPLIANT 30 29 nC 0.0045 at VGS = 4.5 V 27 100 % Avalanche Tested APPLICATIONS Notebook PC Core - Low Side Switch SO-8 D SD 1 8 ... See More ⇒

Detailed specifications: SI4156DY , SI4160DY , SI4162DY , SI4164DY , SI4166DY , SI4168DY , SI4170DY , SI4172DY , IRF730 , SI4176DY , SI4178DY , SI4186DY , SI4190ADY , SI4190DY , SI4196DY , SI4200DY , SI4202DY .

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