All MOSFET. 2SJ128 Datasheet


2SJ128 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ128

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 200 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: MP3

2SJ128 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ128 Datasheet (PDF)

1.1. 2sj128-z.pdf Size:2691K _upd


To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.2. 2sj128-z.pdf Size:998K _nec


 1.3. 2sj128.pdf Size:283K _nec


Datasheet: 2N7272R , 2N7272R1 , 2N7272R2 , 2N7272R3 , 2N7272R4 , 2N7275D , 2N7275H , 2N7275R , IRF640 , 2SJ132 , 2SJ133 , 2SJ134 , 2SJ135 , 2SJ136 , 2SJ137 , 2SJ138 , 2SJ139 .

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