SI4196DY Spec and Replacement
Type Designator: SI4196DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: SO-8
SI4196DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4196DY Specs
si4196dy.pdf
New Product Si4196DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg Tested 0.027 at VGS = 4.5 V 8 100 % UIS Tested 0.032 at VGS = 2.5 V 20 8 8.3 nC Compliant to RoHS Directive 2002/95/EC 0.040 at VGS = 1.8 V 8 APPLICATIONS DC/DC Converter Load ... See More ⇒
si4190ady.pdf
New Product Si4190ADY Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0088 at VGS = 10 V 18.4 Material categorization For definitions of compliance please see 100 0.0094 at VGS = 7.5 V 17.8 20.7 nC www.vishay.com/doc?99912 0.0120 at VGS = 4.5 V 1... See More ⇒
si4190dy.pdf
New Product Si4190DY Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0088 at VGS = 10 V 20 TrenchFET Power MOSFET 100 18.3 nC 0.012 at VGS = 4.5 V 17 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Prim... See More ⇒
Detailed specifications: SI4170DY , SI4172DY , SI4174DY , SI4176DY , SI4178DY , SI4186DY , SI4190ADY , SI4190DY , IRF540N , SI4200DY , SI4202DY , SI4204DY , SI4210DY , SI4214DDY , SI4228DY , SI4276DY , SI4286DY .
Keywords - SI4196DY MOSFET specs
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