SI4196DY Datasheet and Replacement
Type Designator: SI4196DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: SO-8
SI4196DY substitution
SI4196DY Datasheet (PDF)
si4196dy.pdf

New ProductSi4196DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg Tested0.027 at VGS = 4.5 V 8 100 % UIS Tested0.032 at VGS = 2.5 V 20 8 8.3 nC Compliant to RoHS Directive 2002/95/EC0.040 at VGS = 1.8 V 8APPLICATIONS DC/DC Converter Load
si4190ady.pdf

New ProductSi4190ADYVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0088 at VGS = 10 V 18.4 Material categorization:For definitions of compliance please see100 0.0094 at VGS = 7.5 V 17.8 20.7 nCwww.vishay.com/doc?999120.0120 at VGS = 4.5 V 1
si4190dy.pdf

New ProductSi4190DYVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0088 at VGS = 10 V 20 TrenchFET Power MOSFET 100 18.3 nC0.012 at VGS = 4.5 V 17 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Prim
Datasheet: SI4170DY , SI4172DY , SI4174DY , SI4176DY , SI4178DY , SI4186DY , SI4190ADY , SI4190DY , IRF540 , SI4200DY , SI4202DY , SI4204DY , SI4210DY , SI4214DDY , SI4228DY , SI4276DY , SI4286DY .
History: BUK7Y15-100E | 2SK3930-01SJ
Keywords - SI4196DY MOSFET datasheet
SI4196DY cross reference
SI4196DY equivalent finder
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History: BUK7Y15-100E | 2SK3930-01SJ



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