SI4196DY Datasheet. Specs and Replacement

Type Designator: SI4196DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: SO-8

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SI4196DY datasheet

 ..1. Size:106K  vishay
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SI4196DY

New Product Si4196DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg Tested 0.027 at VGS = 4.5 V 8 100 % UIS Tested 0.032 at VGS = 2.5 V 20 8 8.3 nC Compliant to RoHS Directive 2002/95/EC 0.040 at VGS = 1.8 V 8 APPLICATIONS DC/DC Converter Load ... See More ⇒

 9.1. Size:271K  vishay
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SI4196DY

New Product Si4190ADY Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0088 at VGS = 10 V 18.4 Material categorization For definitions of compliance please see 100 0.0094 at VGS = 7.5 V 17.8 20.7 nC www.vishay.com/doc?99912 0.0120 at VGS = 4.5 V 1... See More ⇒

 9.2. Size:266K  vishay
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SI4196DY

New Product Si4190DY Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0088 at VGS = 10 V 20 TrenchFET Power MOSFET 100 18.3 nC 0.012 at VGS = 4.5 V 17 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Prim... See More ⇒

Detailed specifications: SI4170DY, SI4172DY, SI4174DY, SI4176DY, SI4178DY, SI4186DY, SI4190ADY, SI4190DY, IRF540N, SI4200DY, SI4202DY, SI4204DY, SI4210DY, SI4214DDY, SI4228DY, SI4276DY, SI4286DY

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