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SI4202DY Spec and Replacement


   Type Designator: SI4202DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 146 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SO-8

 SI4202DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4202DY Specs

 ..1. Size:252K  vishay
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SI4202DY

Si4202DY Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.014 at VGS = 10 V 12.1 TrenchFET Power MOSFET 30 5.4 nC 0.017 at VGS = 4.5 V 11 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Syn... See More ⇒

 9.1. Size:249K  vishay
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SI4202DY

Si4200DY Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.025 at VGS = 10 V 8a 25 3.6 nC TrenchFET Gen III Power MOSFET 0.030 at VGS = 4.5 V 7.9 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter - Game Console - Notebook Sys... See More ⇒

 9.2. Size:257K  vishay
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SI4202DY

Si4204DY Vishay Siliconix Dual N-Channel 20 V MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0046 at VGS = 10 V 19.8a TrenchFET Power MOSFET 20 14.5 0.006 at VGS = 4.5 V 17.3a 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS D D 1 2 SO-8 ... See More ⇒

Detailed specifications: SI4174DY , SI4176DY , SI4178DY , SI4186DY , SI4190ADY , SI4190DY , SI4196DY , SI4200DY , 50N06 , SI4204DY , SI4210DY , SI4214DDY , SI4228DY , SI4276DY , SI4286DY , SI4288DY , SI4320DY .

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