SI4202DY Datasheet. Specs and Replacement

Type Designator: SI4202DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 146 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SO-8

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SI4202DY datasheet

 ..1. Size:252K  vishay
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SI4202DY

Si4202DY Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.014 at VGS = 10 V 12.1 TrenchFET Power MOSFET 30 5.4 nC 0.017 at VGS = 4.5 V 11 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Syn... See More ⇒

 9.1. Size:249K  vishay
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SI4202DY

Si4200DY Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.025 at VGS = 10 V 8a 25 3.6 nC TrenchFET Gen III Power MOSFET 0.030 at VGS = 4.5 V 7.9 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter - Game Console - Notebook Sys... See More ⇒

 9.2. Size:257K  vishay
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SI4202DY

Si4204DY Vishay Siliconix Dual N-Channel 20 V MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0046 at VGS = 10 V 19.8a TrenchFET Power MOSFET 20 14.5 0.006 at VGS = 4.5 V 17.3a 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS D D 1 2 SO-8 ... See More ⇒

Detailed specifications: SI4174DY, SI4176DY, SI4178DY, SI4186DY, SI4190ADY, SI4190DY, SI4196DY, SI4200DY, 50N06, SI4204DY, SI4210DY, SI4214DDY, SI4228DY, SI4276DY, SI4286DY, SI4288DY, SI4320DY

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