SI4204DY Datasheet and Replacement
Type Designator: SI4204DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 926 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: SO-8
SI4204DY substitution
SI4204DY Datasheet (PDF)
si4204dy.pdf

Si4204DYVishay SiliconixDual N-Channel 20 V MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0046 at VGS = 10 V 19.8a TrenchFET Power MOSFET20 14.50.006 at VGS = 4.5 V 17.3a 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSD D 1 2 SO-8
si4202dy.pdf

Si4202DYVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.014 at VGS = 10 V 12.1 TrenchFET Power MOSFET30 5.4 nC0.017 at VGS = 4.5 V 11 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Syn
si4200dy.pdf

Si4200DYVishay SiliconixDual N-Channel 25 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.025 at VGS = 10 V 8a25 3.6 nC TrenchFET Gen III Power MOSFET0.030 at VGS = 4.5 V 7.9 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Converter- Game Console- Notebook Sys
Datasheet: SI4176DY , SI4178DY , SI4186DY , SI4190ADY , SI4190DY , SI4196DY , SI4200DY , SI4202DY , IRF640 , SI4210DY , SI4214DDY , SI4228DY , SI4276DY , SI4286DY , SI4288DY , SI4320DY , SI4322DY .
History: SVF740MJ | AP2610GY-HF | 2SK3417K
Keywords - SI4204DY MOSFET datasheet
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History: SVF740MJ | AP2610GY-HF | 2SK3417K



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