SI4406DY Datasheet. Specs and Replacement

Type Designator: SI4406DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: SO-8

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SI4406DY datasheet

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SI4406DY

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SI4406DY

Si4403BDY Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.017 at VGS = - 4.5 V - 9.9 TrenchFET Power MOSFETs 0.023 at VGS = - 2.5 V - 8.5 - 20 Compliant to RoHS Directive 2002/95/EC 0.032 at VGS = - 1.8 V - 7.2 SO-8 S S 1 8 D S D 2 7 S 3 6 D G G... See More ⇒

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Si4409DY Vishay Siliconix P-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 1.2 at VGS = - 10 V - 1.3 TrenchFET Power MOSFET - 150 4.8 nC 100 % UIS Tested 1.3 at VGS = - 6 V - 1.2 APPLICATIONS Active Clamp Switch Isolated DC/DC Converters S SO-8 S 1 8 D ... See More ⇒

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SI4406DY

Si4401BDY Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.014 at VGS = - 10 V - 10.5 TrenchFET Power MOSFET - 40 40 0.021 at VGS = - 4.5 V - 8.7 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 S 1 8 D S S D 2 7 S 3 6 D G G D 4... See More ⇒

Detailed specifications: SI4396DY, SI4398DY, SI4401BDY, SI4401DDY, SI4401DY, SI4403BDY, SI4403CDY, SI4404DY, AO3401, SI4408DY, SI4409DY, SI4410BDY, SI4410DYPBF, SI4411DY, SI4412ADY, SI4413ADY, SI4418DY

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