SI4477DY Datasheet. Specs and Replacement

Type Designator: SI4477DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 980 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm

Package: SO-8

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SI4477DY datasheet

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SI4477DY

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SI4477DY

SI4477DY www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G ... See More ⇒

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SI4477DY

Si4472DY Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.045 at VGS = 10 V 7.7 Extremely Low Qgd for Switching Losses 150 23 nC 0.047 at VGS = 8 V 7.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC APPLICATION... See More ⇒

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SI4477DY

Si4473DY Vishay Siliconix P-Channel 14-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) APPLICATION 0.011 @ VGS = -4.5 V -13 -14 -14 D Battery Switch for Portable Equipment 0.016 @ VGS = -2.5 V -11 SO-8 S SD 1 8 S D 2 7 G SD 3 6 G D 4 5 Top View D Ordering Information Si4473DY Si4473DY-T1 (with Tape and Reel) P-Channel MO... See More ⇒

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Detailed specifications: SI4459ADY, SI4462DY, SI4463CDY, SI4464DY, SI4465ADY, SI4466DY, SI4470EY, SI4472DY, 8N60, SI4482DY, SI4483ADY, SI4483EDY, SI4484EY, SI4485DY, SI4486EY, SI4487DY, SI4488DY

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