SI4477DY Spec and Replacement
Type Designator: SI4477DY
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 980 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: SO-8
SI4477DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4477DY Specs
si4477dy.pdf
SI4477DY www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G ... See More ⇒
si4472dy.pdf
Si4472DY Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.045 at VGS = 10 V 7.7 Extremely Low Qgd for Switching Losses 150 23 nC 0.047 at VGS = 8 V 7.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC APPLICATION... See More ⇒
si4473dy.pdf
Si4473DY Vishay Siliconix P-Channel 14-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) APPLICATION 0.011 @ VGS = -4.5 V -13 -14 -14 D Battery Switch for Portable Equipment 0.016 @ VGS = -2.5 V -11 SO-8 S SD 1 8 S D 2 7 G SD 3 6 G D 4 5 Top View D Ordering Information Si4473DY Si4473DY-T1 (with Tape and Reel) P-Channel MO... See More ⇒
Detailed specifications: SI4459ADY , SI4462DY , SI4463CDY , SI4464DY , SI4465ADY , SI4466DY , SI4470EY , SI4472DY , 8N60 , SI4482DY , SI4483ADY , SI4483EDY , SI4484EY , SI4485DY , SI4486EY , SI4487DY , SI4488DY .
Keywords - SI4477DY MOSFET specs
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