SI4646DY Datasheet. Specs and Replacement
Type Designator: SI4646DY 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: SO-8
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SI4646DY datasheet
si4646dy.pdf
New Product Si4646DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0115 at VGS = 10 V 12e SkyFET Monolithic TrenchFET Power 30 13.7 nC 0.0145 at VGS = 4.5 V 12e MOSFET and Schottky Diode 100 % Rg and UIS Tested Compl... See More ⇒
si4642dy.pdf
Si4642DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Available 0.00375 at VGS = 10 V 34 30 35.7 nC SkyFET Monolithic TrenchFET Power 0.0047 at VGS = 4.5 V 30 MOSFET and Schottky Diode 100 % Rg and UIS Tested APPLICATIONS Notebook CP... See More ⇒
Detailed specifications: SI4622DY, SI4626ADY, SI4628DY, SI4630DY, SI4632DY, SI4636DY, SI4638DY, SI4642DY, IRF540, SI4654DY, SI4660DY, SI4666DY, SI4668DY, SI4670DY, SI4682DY, SI4684DY, SI4686DY
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