All MOSFET. SI4646DY Datasheet

 

SI4646DY Datasheet and Replacement


   Type Designator: SI4646DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: SO-8
 

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SI4646DY Datasheet (PDF)

 ..1. Size:273K  vishay
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SI4646DY

New ProductSi4646DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0115 at VGS = 10 V 12e SkyFET Monolithic TrenchFET Power 30 13.7 nC0.0145 at VGS = 4.5 V 12e MOSFET and Schottky Diode 100 % Rg and UIS Tested Compl

 9.1. Size:237K  vishay
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SI4646DY

Si4642DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.00375 at VGS = 10 V 3430 35.7 nC SkyFET Monolithic TrenchFET Power 0.0047 at VGS = 4.5 V 30MOSFET and Schottky Diode 100 % Rg and UIS TestedAPPLICATIONS Notebook CP

Datasheet: SI4622DY , SI4626ADY , SI4628DY , SI4630DY , SI4632DY , SI4636DY , SI4638DY , SI4642DY , IRF540N , SI4654DY , SI4660DY , SI4666DY , SI4668DY , SI4670DY , SI4682DY , SI4684DY , SI4686DY .

History: RU190N10R | IRF820ASPBF

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