SI4774DY MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4774DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 251 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: SO-8
SI4774DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4774DY Datasheet (PDF)
si4774dy.pdf
New ProductSi4774DYVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0095 at VGS = 10 V SkyFET Monolithic TrenchFET Gen. 1630 9.5 nCPower MOSFET and Schottky Diode0.0120 at VGS = 4.5 V 15 100 % Rg Tested
si4776dy.pdf
New ProductSi4776DYVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.)Definition SkyFETMonolithic TrenchFETPower 0.016 at VGS = 10 V 11.930 5.5 nCMOSFET and Schottky Diode0.020 at VGS = 4.5 V 10.6 100 % Rg and UIS Teste
si4778dy.pdf
Si4778DYVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Qg (Typ.)ID (A)Available0.023 at VGS = 10 V 8a TrenchFET Power MOSFET25 5.5 nC 100 % Rg and UIS Tested0.028 at VGS = 4.5 V 8aAPPLICATIONS DC/DC Converter Gaming Notebook System PowerSO-8 DS 1
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: WSF20N20G
History: WSF20N20G
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