SI4774DY Datasheet. Specs and Replacement
Type Designator: SI4774DY 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 251 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: SO-8
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SI4774DY substitution
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SI4774DY datasheet
si4774dy.pdf
New Product Si4774DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0095 at VGS = 10 V SkyFET Monolithic TrenchFET Gen. 16 30 9.5 nC Power MOSFET and Schottky Diode 0.0120 at VGS = 4.5 V 15 100 % Rg Tested ... See More ⇒
si4776dy.pdf
New Product Si4776DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Definition SkyFET Monolithic TrenchFET Power 0.016 at VGS = 10 V 11.9 30 5.5 nC MOSFET and Schottky Diode 0.020 at VGS = 4.5 V 10.6 100 % Rg and UIS Teste... See More ⇒
si4778dy.pdf
Si4778DY Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) Available 0.023 at VGS = 10 V 8a TrenchFET Power MOSFET 25 5.5 nC 100 % Rg and UIS Tested 0.028 at VGS = 4.5 V 8a APPLICATIONS DC/DC Converter Gaming Notebook System Power SO-8 D S 1... See More ⇒
Detailed specifications: SI4668DY, SI4670DY, SI4682DY, SI4684DY, SI4686DY, SI4688DY, SI4712DY, SI4752DY, IRF3710, SI4776DY, SI4778DY, SI4800, SI4800BDY, SI4810BDY, SI4812BDY, SI4816BDY, SI4823DY
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