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SI4840BDY Spec and Replacement


   Type Designator: SI4840BDY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SO-8

 SI4840BDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4840BDY Specs

 ..1. Size:238K  vishay
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SI4840BDY

Si4840BDY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.009 at VGS = 10 V TrenchFET Power MOSFET 19 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronou... See More ⇒

 6.1. Size:235K  vishay
 si4840bd.pdf pdf_icon

SI4840BDY

Si4840BDY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.009 at VGS = 10 V TrenchFET Power MOSFET 19 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronou... See More ⇒

 8.1. Size:244K  vishay
 si4840dy.pdf pdf_icon

SI4840BDY

Si4840DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.009 at VGS = 10 V 14 TrenchFET Power MOSFET 40 0.012 at VGS = 4.5 V 12 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D S D 1 8 2 7 S D S 3 6 D G 4 5 G D Top View S Order... See More ⇒

 8.2. Size:859K  cn vbsemi
 si4840dy-t1-e3.pdf pdf_icon

SI4840BDY

SI4840DY-T1-E3 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchron... See More ⇒

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Detailed specifications: SI4830CDY , SI4831BDY , SI4833ADY , SI4833BDY , SI4835DDY , SI4836DY , SI4838BDY , SI4838DY , IRFP260 , SI4840DY , SI4842BDY , SI4848DY , SI4850EY , SI4858DY , SI4860DY , SI4862DY , SI4864DY .

Keywords - SI4840BDY MOSFET specs

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