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SI4850EY Spec and Replacement


   Type Designator: SI4850EY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 18 nC
   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SO-8

 SI4850EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4850EY Specs

 ..1. Size:243K  vishay
si4850ey.pdf pdf_icon

SI4850EY

Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs 60 0.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SO-8 SD 1 8 SD 2 7 ... See More ⇒

 ..2. Size:246K  vishay
si4850ey-t1 si4850ey.pdf pdf_icon

SI4850EY

Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs 60 0.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SO-8 SD 1 8 SD 2 7 ... See More ⇒

 8.1. Size:289K  vishay
si4850bdy.pdf pdf_icon

SI4850EY

Si4850BDY www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES SO-8 Single D TrenchFET Gen IV power MOSFET D 5 D 6 100 % Rg and UIS tested D 7 Material categorization 8 for definitions of compliance please see www.vishay.com/doc?99912 4 APPLICATIONS D G 3 3 Synchronous rectification S S 2 2 S S 1 1 Primary side switch S ... See More ⇒

 8.2. Size:852K  cn vbsemi
si4850dy-t1.pdf pdf_icon

SI4850EY

SI4850DY-T1 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.025 at VGS = 10 V 7.6 60 10.5 nC Optimized for Low Side Synchronous 0.030 at VGS = 4.5 V 6.5 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCF... See More ⇒

Detailed specifications: SI4835DDY , SI4836DY , SI4838BDY , SI4838DY , SI4840BDY , SI4840DY , SI4842BDY , SI4848DY , K4145 , SI4858DY , SI4860DY , SI4862DY , SI4864DY , SI4866BDY , SI4866DY , SI4874BDY , SI4880DY .

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