SI4850EY
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4850EY
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 18
nC
trⓘ - Rise Time: 10
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022
Ohm
Package:
SO-8
SI4850EY
Datasheet (PDF)
..1. Size:243K vishay
si4850ey.pdf 
Si4850EYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs600.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSO-8 SD1 8 SD2 7
..2. Size:246K vishay
si4850ey-t1 si4850ey.pdf
Si4850EYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs600.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSO-8 SD1 8 SD2 7
8.1. Size:289K vishay
si4850bdy.pdf
Si4850BDYwww.vishay.comVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESSO-8 SingleD TrenchFET Gen IV power MOSFETD 5D 6 100 % Rg and UIS testedD 7 Material categorization:8for definitions of compliance please see www.vishay.com/doc?999124APPLICATIONS DG33 Synchronous rectification SS22SS11 Primary side switchS
8.2. Size:852K cn vbsemi
si4850dy-t1.pdf
SI4850DY-T1www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCF
9.1. Size:97K vishay
si4856ady.pdf
Si4856ADYNew ProductVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESD TrenchFETr Power MOSFETSPRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A) Qg (Typ)APPLICATIONS0.0052 @ VGS = 10 V 17D Buck Converter30 2130 210.0076 @ VGS = 4.5 V 14D Synchronous Rectifier- Secondary RectifierSO-8DSD1 8S D2 7SD3 6G D4 5 GTop ViewSOrdering In
9.2. Size:45K vishay
si4856dy.pdf
Si4856DYNew ProductVishay SiliconixN-Channel 30-V MOSFETFEATURESD TrenchFETr Power MOSFETSPRODUCT SUMMARYD 100% RG TestedVDS (V) rDS(on) (W) ID (A)APPLICATIONS0.006 @ VGS = 10 V 17D Buck Converter3030D Synchronous Rectifier0.0085 @ VGS = 4.5 V 14- Secondary RectifierDSO-8SD1 8S D2 7GSD3 6G D4 5Top View SN-Channel MOSFETABSOLUTE MAXIMUM
9.3. Size:72K vishay
si4852dy.pdf
Si4852DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodePRODUCT SUMMARYFEATURESVDS (V) rDS(on) (W) ID (A)D LITTLE FOOTr Plus0.0120 @ VGS = 10 V 11D 100% Rg Tested30300.0175 @ VGS = 4.5 V 9.5SCHOTTKY PRODUCT SUMMARYVSD (v)VDS (V) Diode Forward Voltage IF (A)30 0.53 V @ 3 A 4SO-8DSD1 8S D2 7SD3 6 Schottky DiodeGG D4 5Top ViewS
9.4. Size:75K vishay
si4854dy.pdf
Si4854DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodePRODUCT SUMMARYFEATURESVDS (V) rDS(on) (W) ID (A)D LITTLE FOOTr PlusDual TrenchFETr0.026 @ VGS = 10 V 6.9Power MOSFET Plus Integrated Schottky30 0.030 @ VGS = 4.5 V 6.4 DiodeD PWM Optimized for Faster Swtiching0.041 @ VGS = 2.5 V 5.5D 100% Rg TestedSCHOTTKY PRODUCT SUMMARYAPPLICATIONSVSD
9.5. Size:224K vishay
si4858dy.pdf
Si4858DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.00525 at VGS = 10 V 20 TrenchFET Power MOSFET300.007 at VGS = 4.5 V 17 Optimized for "Low Side" SynchronousRectifier Operation 100 % Rg Tested APPLICATIONS DC/DC Converters Synchr
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