SI5402DC MOSFET. Datasheet pdf. Equivalent
Type Designator: SI5402DC
Marking Code: AA*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 10 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: 1206-8
SI5402DC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI5402DC Datasheet (PDF)
si5402dc.pdf
Si5402DCVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.035 at VGS = 10 V 6.7 TrenchFET Power MOSFETs300.055 at VGS = 4.5 V 5.3 Compliant to RoHS Directive 2002/95/EC1206-8 ChipFETD1 D D D D D Marking Code AA XX D G GLot Traceabil
si5402bdc.pdf
Si5402BDCVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.035 at VGS = 10 V 6.730 TrenchFET Power MOSFET0.042 at VGS = 4.5 V 6.11206-8 ChipFETD1DD DD DD GGMarking CodeSAD XXXLot Traceabilityand Date CodePart # CodeBottom ViewSOrder
si5406cdc.pdf
New ProductSi5406CDCVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.020 at VGS = 4.5 V 6RoHS0.023 at VGS = 2.5 V 12 6 11.5 nCCOMPLIANTAPPLICATIONS0.027 at VGS = 1.8 V 6 Load/Power Switching for Cell Phones and Pagers PA Switch in Cellular Devices
si5406dc.pdf
Si5406DCVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.020 at VGS = 4.5 V 9.5 TrenchFET Power MOSFETs: 2.5 V Rated120.025 at VGS = 2.5 V 8.5 Low Thermal ResistanceAPPLICATIONS Load/Power Switching for Cell Phones and Pagers1206-8 ChipFET
si5403dc.pdf
New ProductSi5403DCVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = - 10 V 6a- 30 2 nC 100 % Rg Tested RoHS0.044 at VGS = - 4.5 V 6aCOMPLIANTAPPLICATIONS DC/DC Converter- Load Switch1206-8 ChipFET- Adaptor Switch1SDD DD D
si5401dc.pdf
Si5401DCVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.032 at VGS = - 4.5 V - 7.1 TrenchFET Power MOSFET0.040 at VGS = - 2.5 V - 6.4 16.5- 20 Ultra-Low On-Resistance0.053 at VGS = - 1.8 V - 5.5 Thermally Enhanced ChipFET Package 40 %
si5404bdc.pdf
Si5404BDCVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.028 at VGS = 4.5 V 7.520 6.3 TrenchFET Power MOSFET0.039 at VGS = 2.5 V 6.31206-8 ChipFET1DDD DD DD GMarking CodeSGAE XXXLot Traceabilityand Date CodePart # CodeBotto
si5404dc.pdf
Si5404DCVishay SiliconixN-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.030 @ VGS = 4.5 V 7.220200.045 @ VGS = 2.5 V 5.9D1206-8 ChipFETr1DD DD DGD GMarking CodeSAB XXLot Traceabilityand Date CodeSPart # CodeBottom ViewN-Channel MOSFETOrdering Information: Si5404DC-T1ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE
si5406cd.pdf
New ProductSi5406CDCVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.020 at VGS = 4.5 V 6RoHS0.023 at VGS = 2.5 V 12 6 11.5 nCCOMPLIANTAPPLICATIONS0.027 at VGS = 1.8 V 6 Load/Power Switching for Cell Phones and Pagers PA Switch in Cellular Devices
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: BF1109WR
History: BF1109WR
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