IRFS243 Specs and Replacement
Type Designator: IRFS243
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: TO3P
IRFS243 substitution
- MOSFET ⓘ Cross-Reference Search
IRFS243 datasheet
irfs240b.pdf
November 2001 IRFS240B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.8A, 200V, RDS(on) = 0.18 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especially tailored to Fast... See More ⇒
irfs244b.pdf
November 2001 IRFS244B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10.2A, 250V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 47 nC) planar, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored to Fast... See More ⇒
Detailed specifications: IRFS230, IRFS231, IRFS232, IRFS233, IRFS240, IRFS240A, IRFS241, IRFS242, IRFB7545, IRFS244A, IRFS250, IRFS250A, IRFS251, IRFS252, IRFS253, IRFS254A, IRFS330
Keywords - IRFS243 MOSFET specs
IRFS243 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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