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SI5457DC Spec and Replacement


   Type Designator: SI5457DC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: 1206-8

 SI5457DC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI5457DC Specs

 ..1. Size:235K  vishay
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SI5457DC

New Product Si5457DC Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.036 at VGS = - 4.5 V - 6a TrenchFET Power MOSFET - 20 0.041 at VGS = - 3.6 V - 6a 12.5 nC 100 % Rg Tested 0.056 at VGS = - 2.5 V - 6a Compliant to RoHS Directive 2002/95/EC 1206... See More ⇒

 9.1. Size:150K  vishay
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SI5457DC

Si5456DU Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.010 at VGS = 10 V 12 TrenchFET Gen III Power MOSFET 20 9.8 nC 0.0135 at VGS = 4.5 V 12 New Thermally Enhanced PowerPAK ChipFET Package - Small Footprint Area PowerPAK ChipFET Single - ... See More ⇒

 9.2. Size:152K  vishay
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SI5457DC

New Product Si5458DU Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) Definition 0.041 at VGS = 10 V 6 TrenchFET Power MOSFET 30 2.8 nC 100 % Rg Tested 0.051 at VGS = 4.5 V 6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK ChipFET Singl... See More ⇒

 9.3. Size:152K  vishay
si5459du.pdf pdf_icon

SI5457DC

New Product Si5459DU Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.052 at VGS = - 4.5 V - 8e TrenchFET Power MOSFET - 20 8 100 % Rg Tested 0.082 at VGS = - 2.5 V - 7.5 Compliant to RoHS Directive 2002/95/EC PowerPAK ChipFET Single APPLICA... See More ⇒

Detailed specifications: SI5441BDC , SI5441DC , SI5442DU , SI5443DC , SI5445BDC , SI5447DC , SI5449DC , SI5456DU , AO4468 , SI5458DU , SI5459DU , SI5461EDC , SI5463EDC , SI5468DC , SI5471DC , SI5475BDC , SI5475DC .

Keywords - SI5457DC MOSFET specs

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