All MOSFET. SI5457DC Datasheet

 

SI5457DC MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI5457DC
   Marking Code: BT*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: 1206-8

 SI5457DC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI5457DC Datasheet (PDF)

 ..1. Size:235K  vishay
 si5457dc.pdf

SI5457DC SI5457DC

New ProductSi5457DCVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.036 at VGS = - 4.5 V - 6a TrenchFET Power MOSFET- 20 0.041 at VGS = - 3.6 V - 6a 12.5 nC 100 % Rg Tested0.056 at VGS = - 2.5 V - 6a Compliant to RoHS Directive 2002/95/EC1206

 9.1. Size:150K  vishay
 si5456du.pdf

SI5457DC SI5457DC

Si5456DUVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = 10 V 12 TrenchFET Gen III Power MOSFET20 9.8 nC0.0135 at VGS = 4.5 V 12 New Thermally Enhanced PowerPAKChipFET Package- Small Footprint AreaPowerPAK ChipFET Single-

 9.2. Size:152K  vishay
 si5458du.pdf

SI5457DC SI5457DC

New ProductSi5458DUVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d, e Qg (Typ.)Definition0.041 at VGS = 10 V 6 TrenchFET Power MOSFET30 2.8 nC 100 % Rg Tested0.051 at VGS = 4.5 V 6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSPowerPAK ChipFET Singl

 9.3. Size:152K  vishay
 si5459du.pdf

SI5457DC SI5457DC

New ProductSi5459DUVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.052 at VGS = - 4.5 V - 8e TrenchFET Power MOSFET- 20 8 100 % Rg Tested0.082 at VGS = - 2.5 V - 7.5 Compliant to RoHS Directive 2002/95/ECPowerPAK ChipFET SingleAPPLICA

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WMS04N10TS

 

 
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