SI6415DQ Datasheet and Replacement
Type Designator: SI6415DQ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 47 nC
tr ⓘ - Rise Time: 17 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TSSOP-8
SI6415DQ substitution
SI6415DQ Datasheet (PDF)
si6415dq.pdf

Si6415DQVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs 0.019 at VGS = - 10 V 6.5Available- 300.030 at VGS = - 4.5 V 5.2RoHS*COMPLIANTS*TSSOP-8G* Source Pins 2, 3, 6 and 7 D D1 8must be tied common.S S2 7Si6415DQS S3 6G D4 5Top V
si6410dq.pdf

Si6410DQVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.014 at VGS = 10 V 7.830RoHS0.021 at VGS = 4.5 V 6.3COMPLIANTDTSSOP-8* Source Pins 2, 3, 6 and 7 must be tied common.GD D1 8S S2 7Si6410DQS S3 6G D4 5Top View S*Ordering Information:
si6413dq.pdf

Si6413DQVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFET 0.010 at VGS = - 4.5 V - 8.8RoHS0.013 at VGS = - 2.5 V - 20 - 7.6COMPLIANTAPPLICATIONS0.016 at VGS = - 1.8 V - 6.8 Load Switch PA Switch Charger SwitchS*TSSOP-8G* Source Pins 2, 3, 6 and 7
Datasheet: SI5936DU , SI5944DU , SI5980DU , SI5997DU , SI5999EDU , SI6404DQ , SI6410DQ , SI6413DQ , IRFB3607 , SI6423DQ , SI6433BDQ , SI6435ADQ , SI6443DQ , SI6459BDQ , SI6463BDQ , SI6465DQ , SI6466ADQ .
History: NCE30H12K | JFPC5N80C
Keywords - SI6415DQ MOSFET datasheet
SI6415DQ cross reference
SI6415DQ equivalent finder
SI6415DQ lookup
SI6415DQ substitution
SI6415DQ replacement
History: NCE30H12K | JFPC5N80C



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