SI7110DN Datasheet. Specs and Replacement

Type Designator: SI7110DN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: POWERPAK-1212-8

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SI7110DN datasheet

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SI7110DN

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SI7110DN

New Product Si7114ADN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET RoHS 100 % Rg Tested 0.0075 at VGS = 10 V 35 COMPLIANT 30 10.2 nC 100 % UIS Tested 0.0098 at VGS = 4.5 V 35 APPLICATIONS PowerPAK 1212-8 Synchronous Rectification S 3.30 ... See More ⇒

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SI7110DN

Si7115DN Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.295 at VGS = - 10 V - 8.9e Low Thermal Resistance PowerPAK - 150 23.2 nC 0.315 at VGS = - 6 V - 8.6e Package with Small Size and Low 1 mm Profile 100 % Rg and UI... See More ⇒

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SI7110DN

Si7113DN Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.134 at VGS = - 10 V - 13.2e Low Thermal Resistance PowerPAK RoHS - 100 16.5 nC Package with Small Size and Low 1.07 mm COMPLIANT 0.145 at VGS = - 4.5V - 12.7e Profile UIS and Rg Tested ... See More ⇒

Detailed specifications: SI6993DQ, SI7100DN, SI7101DN, SI7102DN, SI7104DN, SI7106DN, SI7107DN, SI7108DN, IRFZ24N, SI7112DN, SI7113DN, SI7114ADN, SI7114DN, SI7115DN, SI7116DN, SI7117DN, SI7120ADN

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs