SI7112DN Datasheet. Specs and Replacement
Type Designator: SI7112DN 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 11.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 340 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: POWERPAK-1212-8
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SI7112DN datasheet
si7112dn.pdf
Si7112DN Vishay Siliconix N-Channel 30 V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A) TrenchFET Power MOSFET 0.0075 at VGS = 10 V 17.8 30 New Low Thermal Resistance PowerPAK 0.0082 at VGS = 4.5 V 17.0 Package with Low 1.07 mm Profile 100 % Rg Tested Complia... See More ⇒
si7114adn.pdf
New Product Si7114ADN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET RoHS 100 % Rg Tested 0.0075 at VGS = 10 V 35 COMPLIANT 30 10.2 nC 100 % UIS Tested 0.0098 at VGS = 4.5 V 35 APPLICATIONS PowerPAK 1212-8 Synchronous Rectification S 3.30 ... See More ⇒
si7115dn.pdf
Si7115DN Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.295 at VGS = - 10 V - 8.9e Low Thermal Resistance PowerPAK - 150 23.2 nC 0.315 at VGS = - 6 V - 8.6e Package with Small Size and Low 1 mm Profile 100 % Rg and UI... See More ⇒
Detailed specifications: SI7100DN, SI7101DN, SI7102DN, SI7104DN, SI7106DN, SI7107DN, SI7108DN, SI7110DN, 2N60, SI7113DN, SI7114ADN, SI7114DN, SI7115DN, SI7116DN, SI7117DN, SI7120ADN, SI7120DN
Keywords - SI7112DN MOSFET specs
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History: WST3034 | AP4034GH | SSH4N60 | TSM301K12CQ
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