SI7139DP
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI7139DP
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 22.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 30
nC
trⓘ - Rise Time: 58
nS
Cossⓘ -
Output Capacitance: 695
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055
Ohm
Package:
POWERPAK-SO-8
SI7139DP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI7139DP
Datasheet (PDF)
..1. Size:318K vishay
si7139dp.pdf
New ProductSi7139DPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0055 at VGS = - 10 V - 40d TrenchFET Power MOSFET- 30 49.5 nC 100% Rg Tested0.0090 at VGS = - 4.5 V - 40d 100% UIS TestedPowerPAK SO-8 Compliant to RoHS Directive 2002/
9.1. Size:339K vishay
si7137dp.pdf
New ProductSi7137DPVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition 0.00195 at VGS = - 10 V- 60d TrenchFET Gen III P-Channel Power MOSFET- 20 0.0025 at VGS = - 4.5 V- 60d 183 nC 100 % Rg Tested0.0039 at VGS = - 2.5 V - 60d 100 % UIS Tested
9.2. Size:482K vishay
si7138dp.pdf
Si7138DPVishay SiliconixN-Channel 60 V (D-S) Reduced Qgd, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0078 at VGS = 10 V 30 Low Thermal Resistance PowerPAK Package60 550.009 at VGS = 6 V 30 100 % Rg and Avalanche Tested Compliant to RoHS Directive 2002/95/
9.3. Size:482K vishay
si7136dp.pdf
Si7136DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0032 at VGS = 10 V 30 Ultra-Low On-Resistance Using High20 24.5Density TrenchFET Gen II Power0.0045 at VGS = 4.5 V 30MOSFET TechnologyPowerPAK SO-8 Qg Optimized 100 % Rg Tested
9.4. Size:480K vishay
si7135dp.pdf
New ProductSi7135DPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.0039 at VGS = - 10 V - 60COMPLIANT - 30 78 nC 100 % Rg Tested0.0062 at VGS = - 4.5 V - 60APPLICATIONSPowerPAK SO-8 Notebook- Load SwitchSS6.15 mm 5.15 mm1S2
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.