All MOSFET. IRFS350A Datasheet

 

IRFS350A Datasheet and Replacement


   Type Designator: IRFS350A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 92 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 11.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO3PF
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IRFS350A Datasheet (PDF)

 ..1. Size:235K  1
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IRFS350A

IRFS350AFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 11.5 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 400V Low RDS(ON): 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Character

 7.1. Size:187K  1
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IRFS350A

 7.2. Size:272K  1
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IRFS350A

 7.3. Size:430K  international rectifier
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IRFS350A

PD - 95935BIRFB3507PbFIRFS3507PbFIRFSL3507PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS75Vl High Speed Power SwitchingRDS(on) typ.7.0ml Hard Switched and High Frequency Circuitsl Lead-FreeG max. 8.8mID97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessSSS

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History: ZXMP3F30FH | SM4186T9RL | WMM07N65C4 | NCE30P12BS | NP180N04TUJ | APT10021JFLL | SSW65R190S2

Keywords - IRFS350A MOSFET datasheet

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