IRFS350A Specs and Replacement

Type Designator: IRFS350A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 92 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 305 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO3PF

IRFS350A substitution

- MOSFET ⓘ Cross-Reference Search

 

IRFS350A datasheet

 ..1. Size:235K  1
 irfs350a.pdf pdf_icon

IRFS350A

IRFS350A FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 11.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.254 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Character... See More ⇒

 7.1. Size:187K  1
 irfs350.pdf pdf_icon

IRFS350A

... See More ⇒

 7.2. Size:272K  1
 irfs350 irfs351.pdf pdf_icon

IRFS350A

... See More ⇒

 7.3. Size:430K  international rectifier
 irfb3507pbf irfs3507pbf irfsl3507pbf.pdf pdf_icon

IRFS350A

PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 7.0m l Hard Switched and High Frequency Circuits l Lead-Free G max. 8.8m ID 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness S S S ... See More ⇒

SHOW MORE

Detailed specifications: IRFS332, IRFS333, IRFS340, IRFS340A, IRFS341, IRFS342, IRFS343, IRFS350, IRF540, IRFS351, IRFS352, IRFS353, IRFS430, IRFS431, IRFS432, IRFS433, IRFS440

Keywords - IRFS350A MOSFET specs

 IRFS350A cross reference

 IRFS350A equivalent finder

 IRFS350A pdf lookup

 IRFS350A substitution

 IRFS350A replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility