IRFS353 Datasheet and Replacement
Type Designator: IRFS353
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO3P
IRFS353 substitution
IRFS353 Datasheet (PDF)
irfs350a.pdf

IRFS350AFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 11.5 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 400V Low RDS(ON): 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Character
irfb3507pbf irfs3507pbf irfsl3507pbf.pdf

PD - 95935BIRFB3507PbFIRFS3507PbFIRFSL3507PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS75Vl High Speed Power SwitchingRDS(on) typ.7.0ml Hard Switched and High Frequency Circuitsl Lead-FreeG max. 8.8mID97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessSSS
Datasheet: IRFS340A , IRFS341 , IRFS342 , IRFS343 , IRFS350 , IRFS350A , IRFS351 , IRFS352 , IRFZ44 , IRFS430 , IRFS431 , IRFS432 , IRFS433 , IRFS440 , IRFS440A , IRFS441 , IRFS442 .
Keywords - IRFS353 MOSFET datasheet
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