IRFS353 Datasheet and Replacement
Type Designator: IRFS353
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO3P
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IRFS353 Datasheet (PDF)
irfs350a.pdf

IRFS350AFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 11.5 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 400V Low RDS(ON): 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Character
irfb3507pbf irfs3507pbf irfsl3507pbf.pdf

PD - 95935BIRFB3507PbFIRFS3507PbFIRFSL3507PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS75Vl High Speed Power SwitchingRDS(on) typ.7.0ml Hard Switched and High Frequency Circuitsl Lead-FreeG max. 8.8mID97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessSSS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NTR5103N | HLML6401 | IPN60R1K5CE | GC11N65F | SIRA60DP | NTMFS4851NT1G | AP85T03GH-HF
Keywords - IRFS353 MOSFET datasheet
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History: NTR5103N | HLML6401 | IPN60R1K5CE | GC11N65F | SIRA60DP | NTMFS4851NT1G | AP85T03GH-HF



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