SI7792DP Datasheet and Replacement
Type Designator: SI7792DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 1020 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
Package: POWERPAK-SO-8
SI7792DP substitution
SI7792DP Datasheet (PDF)
si7792dp.pdf

New ProductSi7792DPVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition SkyFET Monolithic TrenchFET Gen III 0.0021 at VGS = 10 V 6030 41 nC Power MOSFET and Schottky Diode0.0026 at VGS = 4.5 V 60 100 % Rg Tested 100 % Av
si7790dp.pdf

New ProductSi7790DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0045 at VGS = 10 V 50 100 % Rg and UIS TestedCOMPLIANT 40 29 nC0.006 at VGS = 4.5 V 50APPLICATIONSPowerPAK SO-8 DC/DC ConverterD S 6.15 mm 5.15 mm 1 S 2
si7794dp.pdf

New ProductSi7794DPVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0034 at VGS = 10 V SkyFET Monolithic TrenchFET Gen III 6030 23 nCPower MOSFET and Schottky Diode0.0042 at VGS = 4.5 V 60 100 % Rg Tested 100 % Aval
Datasheet: SI7742DP , SI7748DP , SI7758DP , SI7772DP , SI7774DP , SI7784DP , SI7788DP , SI7790DP , 8205A , SI7794DP , SI7802DN , SI7804DN , SI7806ADN , SI7810DN , SI7812DN , SI7818DN , SI7820DN .
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