SI7818DN MOSFET. Datasheet pdf. Equivalent
Type Designator: SI7818DN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.4 nC
trⓘ - Rise Time: 10 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
Package: POWERPAK-1212-8
SI7818DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI7818DN Datasheet (PDF)
si7818dn.pdf
Si7818DNVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.135 at VGS = 10 V 3.4 PWM-Optimized TrenchFET Power MOSFET150 20 nC0.142 at VGS = 6 V 3.3 100 % Rg Tested Avalanche TestedAPPLICATIONSPowerPAK 1212-8 Primary Side Switching
si7810dn.pdf
Si7810DNVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFET 0.062 at VGS = 10 V 5.4 New Low Thermal ResistanceRoHS100COMPLIANT0.084 at VGS = 6 V PowerPAK 1212-8 Package with Low 4.61.07 mm Profile PWM OptimizedAPPLICATIONS Primary Side
si7812dn.pdf
Si7812DNVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.037 at VGS = 10 V 16e TrenchFET Power MOSFET75 8 nC0.046 at VGS = 4.5 V 16e Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mmProfilePowerPAK 1212-8APPLICATIONS
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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