SI7818DN Specs and Replacement

Type Designator: SI7818DN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: POWERPAK-1212-8

SI7818DN substitution

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SI7818DN datasheet

 ..1. Size:533K  vishay
 si7818dn.pdf pdf_icon

SI7818DN

Si7818DN Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.135 at VGS = 10 V 3.4 PWM-Optimized TrenchFET Power MOSFET 150 20 nC 0.142 at VGS = 6 V 3.3 100 % Rg Tested Avalanche Tested APPLICATIONS PowerPAK 1212-8 Primary Side Switching... See More ⇒

 9.1. Size:70K  vishay
 si7810dn.pdf pdf_icon

SI7818DN

Si7810DN Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.062 at VGS = 10 V 5.4 New Low Thermal Resistance RoHS 100 COMPLIANT 0.084 at VGS = 6 V PowerPAK 1212-8 Package with Low 4.6 1.07 mm Profile PWM Optimized APPLICATIONS Primary Side... See More ⇒

 9.2. Size:549K  vishay
 si7812dn.pdf pdf_icon

SI7818DN

Si7812DN Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.037 at VGS = 10 V 16e TrenchFET Power MOSFET 75 8 nC 0.046 at VGS = 4.5 V 16e Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm Profile PowerPAK 1212-8 APPLICATIONS... See More ⇒

Detailed specifications: SI7790DP, SI7792DP, SI7794DP, SI7802DN, SI7804DN, SI7806ADN, SI7810DN, SI7812DN, 12N60, SI7820DN, SI7840BDP, SI7846DP, SI7848BDP, SI7848DP, SI7850DP, SI7852ADP, SI7852DP

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