All MOSFET. IRFS440A Datasheet

 

IRFS440A Datasheet and Replacement


   Type Designator: IRFS440A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO3PF
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IRFS440A Datasheet (PDF)

 ..1. Size:226K  1
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IRFS440A

IRFS440AFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.2 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 500V Lower RDS(ON): 0.638 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

 ..2. Size:237K  inchange semiconductor
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IRFS440A

isc N-Channel MOSFET Transistor IRFS440AFEATURESAvalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate Charge100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATI

 7.1. Size:279K  1
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IRFS440A

 7.2. Size:691K  1
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IRFS440A

November 2001IRFS440B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.2A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to Fast s

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AM4437P | CED05N8 | AON6794 | IRLR024 | HFD2N60F | BUZ84 | BL10N70-A

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