SI8100DB Specs and Replacement

Type Designator: SI8100DB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0108 Ohm

Package: MICRO-FOOT

SI8100DB substitution

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SI8100DB datasheet

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SI8100DB

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Detailed specifications: SI7946DP, SI7949DP, SI7956DP, SI7960DP, SI7980DP, SI7994DP, SI7997DP, SI7998DP, IRLB3034, SI8401DB, SI8402DB, SI8404DB, SI8405DB, SI8406DB, SI8407DB, SI8409DB, SI8410DB

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