SI8409DB Specs and Replacement

Type Designator: SI8409DB

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: MICRO-FOOT

SI8409DB substitution

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SI8409DB datasheet

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Detailed specifications: SI7998DP, SI8100DB, SI8401DB, SI8402DB, SI8404DB, SI8405DB, SI8406DB, SI8407DB, MMIS60R580P, SI8410DB, SI8413DB, SI8415DB, SI8416DB, SI8417DB, SI8424CDB, SI8424DB, SI8425DB

Keywords - SI8409DB MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs