SI8441DB Specs and Replacement
Type Designator: SI8441DB
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.77 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: MICRO-FOOT
SI8441DB substitution
- MOSFET ⓘ Cross-Reference Search
SI8441DB datasheet
Detailed specifications: SI8416DB, SI8417DB, SI8424CDB, SI8424DB, SI8425DB, SI8429DB, SI8435DB, SI8439DB, IRF540N, SI8445DB, SI8447DB, SI8451DB, SI8457DB, SI8461DB, SI8465DB, SI8466EDB, SI8467DB
Keywords - SI8441DB MOSFET specs
SI8441DB cross reference
SI8441DB equivalent finder
SI8441DB pdf lookup
SI8441DB substitution
SI8441DB replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SI8439DB
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