All MOSFET. IRFS451 Datasheet

 

IRFS451 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFS451
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 151(max) nC
   trⓘ - Rise Time: 50(max) nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3PF

 IRFS451 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFS451 Datasheet (PDF)

 ..1. Size:275K  1
 irfs450 irfs451.pdf

IRFS451 IRFS451

 0.1. Size:256K  international rectifier
 irfs4510pbf irfsl4510pbf.pdf

IRFS451 IRFS451

PD - 97771IRFS4510PbFIRFSL4510PbFHEXFET Power MOSFETDApplicationsVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.11.3ml Uninterruptible Power Supplyl High Speed Power SwitchingG max. 13.9ml Hard Switched and High Frequency CircuitsID (Silicon Limited)61ASBenefitsDl Improved Gate, Avalanche and Dynamic dV/dtDRuggednessl

 0.2. Size:258K  inchange semiconductor
 irfs4510.pdf

IRFS451 IRFS451

Isc N-Channel MOSFET Transistor IRFS4510FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 8.1. Size:187K  1
 irfs450.pdf

IRFS451 IRFS451

 8.2. Size:233K  1
 irfs450a.pdf

IRFS451 IRFS451

IRFS450AFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.6 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 500V Lower RDS(ON): 0.308 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characte

 8.3. Size:687K  fairchild semi
 irfs450b.pdf

IRFS451 IRFS451

November 2001IRFS450B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.6A, 500V, RDS(on) = 0.39 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 87 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fast

 8.4. Size:238K  inchange semiconductor
 irfs450a.pdf

IRFS451 IRFS451

isc N-Channel MOSFET Transistor IRFS450AFEATURESAvalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating Area100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose appl

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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