SI8461DB Specs and Replacement

Type Designator: SI8461DB

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: MICRO-FOOT

SI8461DB substitution

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SI8461DB datasheet

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Detailed specifications: SI8429DB, SI8435DB, SI8439DB, SI8441DB, SI8445DB, SI8447DB, SI8451DB, SI8457DB, IRF640, SI8465DB, SI8466EDB, SI8467DB, SI8469DB, SI8472DB, SI8473EDB, SI8475EDB, SI8483DB

Keywords - SI8461DB MOSFET specs

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