SI8805EDB PDF and Equivalents Search

 

SI8805EDB Specs and Replacement

Type Designator: SI8805EDB

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: MICRO-FOOT

SI8805EDB substitution

- MOSFET ⓘ Cross-Reference Search

 

SI8805EDB datasheet

 ..1. Size:139K  vishay
 si8805edb.pdf pdf_icon

SI8805EDB

... See More ⇒

 9.1. Size:222K  vishay
 si8806db.pdf pdf_icon

SI8805EDB

... See More ⇒

 9.2. Size:121K  vishay
 si8800ed.pdf pdf_icon

SI8805EDB

... See More ⇒

 9.3. Size:122K  vishay
 si8800edb.pdf pdf_icon

SI8805EDB

... See More ⇒

SHOW MORE

Detailed specifications: SI8475EDB , SI8483DB , SI8487DB , SI8489EDB , SI8497DB , SI8499DB , SI8800EDB , SI8802DB , 7N65 , SI8806DB , SI8808DB , SI8809EDB , SI8810 , SI8810EDB , SI8812DB , SI8816EDB , SI8817DB .

History: IRFH4253DPBF

Keywords - SI8805EDB MOSFET specs

 SI8805EDB cross reference
 SI8805EDB equivalent finder
 SI8805EDB pdf lookup
 SI8805EDB substitution
 SI8805EDB replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 


 
↑ Back to Top
.