SI8805EDB PDF Specs and Replacement
Type Designator: SI8805EDB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 2.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
Package: MICRO-FOOT
SI8805EDB substitution
SI8805EDB PDF Specs
Detailed specifications: SI8475EDB , SI8483DB , SI8487DB , SI8489EDB , SI8497DB , SI8499DB , SI8800EDB , SI8802DB , 7N65 , SI8806DB , SI8808DB , SI8809EDB , SI8810 , SI8810EDB , SI8812DB , SI8816EDB , SI8817DB .
Keywords - SI8805EDB MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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