SI8805EDB Datasheet. Specs and Replacement

Type Designator: SI8805EDB  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: MICRO-FOOT

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Detailed specifications: SI8475EDB, SI8483DB, SI8487DB, SI8489EDB, SI8497DB, SI8499DB, SI8800EDB, SI8802DB, 7N65, SI8806DB, SI8808DB, SI8809EDB, SI8810, SI8810EDB, SI8812DB, SI8816EDB, SI8817DB

Keywords - SI8805EDB MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs